A brief overview of the rapid progress and proposed improvements in gallium nitride epitaxy and process for third-generation semiconductors with wide bandgap
AC Liu, YY Lai, HC Chen, AP Chiu, HC Kuo - Micromachines, 2023 - mdpi.com
In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF …
This study intends to investigate the effects of barrier scaling, a crucial RF GaN-HEMT
design element, which is imperative to achieve enhanced performance at nano-scale …
design element, which is imperative to achieve enhanced performance at nano-scale …
A Review of Homoepitaxy of III-Nitride Semiconductors by Metal Organic Chemical Vapor Deposition and the Effects on Vertical Devices
JK Hite - Crystals, 2023 - mdpi.com
This paper reviews some of the basic issues in homoepitaxial growth of III-nitrides to enable
a vertical device technology. It focuses on the use of metal organic chemical vapor …
a vertical device technology. It focuses on the use of metal organic chemical vapor …
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future …
In this study, the influence of AlN barrier thickness (tb) on the RF & DC performances of 50
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
Hybrid edge termination in vertical GaN: Approximating beveled edge termination via discrete implantations
This work examines a new hybrid edge termination structure for vertical GaN diodes. The
hybrid JTE-GR termination consists of superimposed guard rings (GRs) onto a junction …
hybrid JTE-GR termination consists of superimposed guard rings (GRs) onto a junction …
[HTML][HTML] LG= 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications
High-performance LG= 50 nm graded double-channel (GDC)-HEMT featuring AlN top
barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated …
barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated …
Methodology and implementation of a tunable deep-ultraviolet laser source for photoemission electron microscopy
Photoemission electron microscopy (PEEM) is a unique and powerful tool for studying the
electronic properties of materials and surfaces. However, it requires intense and well …
electronic properties of materials and surfaces. However, it requires intense and well …
Using machine learning with optical profilometry for GaN wafer screening
To improve the manufacturing process of GaN wafers, inexpensive wafer screening
techniques are required to both provide feedback to the manufacturing process and prevent …
techniques are required to both provide feedback to the manufacturing process and prevent …
An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and …
In this simulation work, the effect of Al x Ga 1-x N and In x Ga 1-x N back barriers (BB) on the
RF & DC performances of recessed T-gated Fe-doped AlN/GaN/SiC HEMT device is …
RF & DC performances of recessed T-gated Fe-doped AlN/GaN/SiC HEMT device is …
Improving vertical GaN p–n diode performance with room temperature defect mitigation
Defect mitigation of electronic devices is conventionally achieved using thermal annealing.
To mobilize the defects, very high temperatures are necessary. Since thermal diffusion is …
To mobilize the defects, very high temperatures are necessary. Since thermal diffusion is …