Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
A brief overview of the rapid progress and proposed improvements in gallium nitride epitaxy and process for third-generation semiconductors with wide bandgap
AC Liu, YY Lai, HC Chen, AP Chiu, HC Kuo - Micromachines, 2023 - mdpi.com
In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF …
This study intends to investigate the effects of barrier scaling, a crucial RF GaN-HEMT
design element, which is imperative to achieve enhanced performance at nano-scale …
design element, which is imperative to achieve enhanced performance at nano-scale …
A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications
This comprehensive review delves into the intricate realm of GaN-based metal–oxide–
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future …
In this study, the influence of AlN barrier thickness (tb) on the RF & DC performances of 50
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and …
In this simulation work, the effect of Al x Ga 1-x N and In x Ga 1-x N back barriers (BB) on the
RF & DC performances of recessed T-gated Fe-doped AlN/GaN/SiC HEMT device is …
RF & DC performances of recessed T-gated Fe-doped AlN/GaN/SiC HEMT device is …
[HTML][HTML] LG= 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications
High-performance LG= 50 nm graded double-channel (GDC)-HEMT featuring AlN top
barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated …
barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated …
Hybrid edge termination in vertical GaN: Approximating beveled edge termination via discrete implantations
This work examines a new hybrid edge termination structure for vertical GaN diodes. The
hybrid JTE-GR termination consists of superimposed guard rings (GRs) onto a junction …
hybrid JTE-GR termination consists of superimposed guard rings (GRs) onto a junction …
Using machine learning with optical profilometry for GaN wafer screening
To improve the manufacturing process of GaN wafers, inexpensive wafer screening
techniques are required to both provide feedback to the manufacturing process and prevent …
techniques are required to both provide feedback to the manufacturing process and prevent …
Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN pin Diodes with Avalanche Capability
Vertical gallium nitride (GaN) pin diodes with a planar hybrid edge termination (HET)
experimentally demonstrate avalanche capability. The HET consists of a nitrogen ion …
experimentally demonstrate avalanche capability. The HET consists of a nitrogen ion …
A Review of Homoepitaxy of III-Nitride Semiconductors by Metal Organic Chemical Vapor Deposition and the Effects on Vertical Devices
JK Hite - Crystals, 2023 - mdpi.com
This paper reviews some of the basic issues in homoepitaxial growth of III-nitrides to enable
a vertical device technology. It focuses on the use of metal organic chemical vapor …
a vertical device technology. It focuses on the use of metal organic chemical vapor …