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[PDF][PDF] Study of Effects of Donor-Acceptor Interaction in Silicon Nanoscale Co-Doped Devices

P Chitra - 2021 - shizuoka.repo.nii.ac.jp
In order to achieve higher performance of the integrated circuits (ICs), a drive for continuous
miniaturization of silicon (Si) electronic devices has brought the characteristic features of …
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[PDF] arxiv.org

Probing limits of STM field emission patterned Si:P -doped devices

M Rudolph, SM Carr, G Subramania, GT Eyck… - arxiv preprint arxiv …, 2014 - arxiv.org
Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by
H-desorption lithography with a scanning tunneling microscope (STM). This milestone in …
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[PDF][PDF] DOCTOR THESIS

C Pandy - shizuoka.repo.nii.ac.jp
In order to achieve higher performance of the integrated circuits (ICs), a drive for continuous
miniaturization of silicon (Si) electronic devices has brought the characteristic features of …
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