PbZrO3 has been broadly considered as a prototypical antiferroelectric material for high-
power energy storage. A recent theoretical study suggests that the ground state of PbZrO3 is …

Antiferroelectric materials have shown great potential in electronic devices benefiting from
the reversible phase transition between ferroelectric and antiferroelectric phases …

Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in
ultra-thin anti-ferroelectric films, sparking people's interest in using antiferroelectric materials …

The prototypical antiferroelectric perovskite PbZrO 3 (PZO) has garnered considerable
attention in recent years due to its significance in technological applications and …

Antiferroelectric oxides are promising materials for applications in high‐density energy
storage, solid‐state cooling, and negative capacitance devices. However, the range of oxide …

Domain walls in complex perovskite oxides are known for their unique functional properties
and potential in electronic devices. Hafnium oxide (HfO2)-based ferroelectric and …

Materials with antipolar-polar transformation are attractive for their large functional
responses. However, the antipolar state remains controversial in many materials. For …

Antiferroelectrics (AFEs) undergo reversible antiferroelectric-ferroelectric (AFE-FE) phase
transitions under external electric fields, and show great promise in modern electronic …

The switching dynamics of antiferroelectric lead zirconate (PbZrO3) freestanding capacitors
compared to their epitaxial counterparts is reported. Frequency dependence of hysteresis …

This study investigates the ferroelectric phases of NaNbO 3 using density functional theory
(DFT) simulations. Special attention is given to the antiferroelectric polymorph Pbcm and the …