This study describes a proposed method to determine the most optimal level of process
parameters, considering multiple electrical properties of titanium dioxide/tungsten silicide …

In this study, orthogonal array of L 18 in Taguchi method was used to optimize the process
parameters variance on threshold voltage (V TH) in 45nm p-channel Metal Oxide …

This paper describes growth process of the two silicide Sub-nanometer devices and the
different effects of having cobalt silicide and titanium silicide on a Sub-nanometer CMOS …

In this research, the effect of the process parameters variation on drain induced barrier
lowering (DIBL) was investigated. The fabrication of the transistor device was performed …

In this work, a gate all around GAAFET transistor has been studied and numerically
optimized. The finite element method was adopted for the discretization of the equations …

The semiconductor industry has shifted to the System-On-Chip (SoC) platform. The short
channel effects (SCEs) turns out to be noticeable with the transistor scaling. Consequently …

This paper aims to propose a new structure of vertical double-gate NMOS device with
titanium silicide (TiSi x) and hafnium dioxide (HfO 2) are utilized as gates and an insulator …

This paper presents an investigation of the most influential parameters in designing a Mach
Zehnder Interferometer (MZI) on Silicon-On-Insulator (SOI) using Taguchi method. The …

In this paper, Taguchi method was used to analyze of input process parameters variations
on threshold voltage (V TH) in 45nm n-channel Metal Oxide Semiconductor device. The …

Designing of an Asymmetric RF Oscillator for improved Signal Integrity, using Design of
Experiments is presented and Taguchi Orthogonal Array is used for the same. Dependence …