This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …

As transistors are scaled to smaller dimensions, their static power increases. Combining two-
dimensional (2D) channel materials with complementary metal–oxide–semiconductor …

This paper reviews the recent historical trends of the NAND Flash technology, highlighting
the evolution of its main parameters and explaining what allowed it to become not only the …

The sensitive dependence of a semiconductor's electronic, optical and magnetic properties
on dopants has provided an extensive range of tunable phenomena to explore and apply to …

This paper presents an asynchronous SAR ADC for flexible, low energy radios. To achieve
excellent power efficiency for a relatively moderate resolution, various techniques are …

We evaluate Website authentication measures that are designed to protect users from man-
in-the-middle,'phishing', and other site forgery attacks. We asked 67 bank customers to …

Recent changes in CMOS device structures and materials motivated by impending atomistic
and quantum-mechanical limitations have profoundly influenced the nature of delay and …

Biosensors based on silicon nanowires (Si-NWs) promise highly sensitive dynamic label-
free electrical detection of biomolecules. Despite the tremendous potential and promising …

As technology scales into nano-meter region, design and test of Static Random Access
Memories (SRAMs) becomes a highly complex task. Process disturbances and various …