Comparison of RF/Analog and Linearity Performance of Various TFETs Using Source Engineering

DC and RF/analog performances of dielectric-modulated split-source double gate TFET biosensor: A simulation study

B Dewan, S Chaudhary, D Singh - Materials Science and Engineering: B, 2025 - Elsevier
This work presents split source double gate (SSDG) dielectric modulated (DM) TFET for
label free biosensing. The nanogap cavity is considered near the source region to lodge an …
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A label-free dielectric-modulated biosensor using split-source double gate TFET

B Dewan, S Chaudhary, D Singh - Micro and Nanostructures, 2025 - Elsevier
This work presents split source double gate (SSDG) dielectric modulated (DM) Tunnel Field
Effect Transistor (TFET) for label free biosensing. The nanogap cavity is considered near the …
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Band gap and gate dielectric engineered novel Si0. 9Ge0. 1/InAs junctionless TFET for RFIC applications

K Kumar, A Kumar, V Kumar, A Jain… - Engineering Research …, 2024 - iopscience.iop.org
In this study, we present a dual dielectric material gated novel Si 0.9 Ge 0.1/InAs hetero-
structure Junctionless TFET (DMG-HJLTFET), in which first time, a novel amalgamation of Si …
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