Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two‐dimensional layered materials
Reversible chemical and structural changes induced by ionic motion and reaction in
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …
[HTML][HTML] A review on resistive switching in high-k dielectrics: A nanoscale point of view using conductive atomic force microscope
M Lanza - Materials, 2014 - mdpi.com
Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for
next generation information storage, leading to great performance and fabrication-friendly …
next generation information storage, leading to great performance and fabrication-friendly …
A compact model for metal–oxide resistive random access memory with experiment verification
A dynamic Verilog-A resistive random access memory (RRAM) compact model, including
cycle-to-cycle variation, is developed for circuit/system explorations. The model not only …
cycle-to-cycle variation, is developed for circuit/system explorations. The model not only …
Technological exploration of RRAM crossbar array for matrix-vector multiplication
Matrix-vector multiplication is the key operation for many computationally intensive
algorithms. The emerging metal oxide resistive switching random access memory (RRAM) …
algorithms. The emerging metal oxide resistive switching random access memory (RRAM) …
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
We propose a model describing the operations of hafnium oxide-based resistive random
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …
The strategies of filament control for improving the resistive switching performance
With the rapid application of artificial intelligence in daily life and work, the traditional von
Neumann architecture device faces the limitation of scalability and high energy …
Neumann architecture device faces the limitation of scalability and high energy …
Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach
S Aldana, P García-Fernández… - Journal of Physics D …, 2020 - iopscience.iop.org
A simulation study has been performed to analyze resistive switching (RS) phenomena in
valence change memories (VCM) based on a HfO 2 dielectric. The kernel of the simulation …
valence change memories (VCM) based on a HfO 2 dielectric. The kernel of the simulation …
Conductance quantization in resistive random access memory
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure,
excellent performances, and complementary metal-oxide-semiconductor (CMOS) …
excellent performances, and complementary metal-oxide-semiconductor (CMOS) …
Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is
promising in novel memory and logic device applications. Understanding the physics of RS …
promising in novel memory and logic device applications. Understanding the physics of RS …
Forming-free and self-rectifying resistive switching of the simple Pt/TaO x/n-Si structure for access device-free high-density memory application
The search for self-rectifying resistive memories has aroused great attention due to their
potential in high-density memory applications without additional access devices. Here we …
potential in high-density memory applications without additional access devices. Here we …