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Displacement Talbot lithography for nano-engineering of III-nitride materials
Nano-engineering III-nitride semiconductors offers a route to further control the
optoelectronic properties, enabling novel functionalities and applications. Although a variety …
optoelectronic properties, enabling novel functionalities and applications. Although a variety …
Optical design of InGaN/GaN nanoLED arrays on a chip: Toward: Highly resolved illumination
The physical laws of diffraction limit the spatial resolution of optical systems. In contrary to
most superresolution microscopy approaches used today, in our novel idea we are aiming to …
most superresolution microscopy approaches used today, in our novel idea we are aiming to …
Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation
Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light.
However, the increased surface area in combination with surface defects induced by …
However, the increased surface area in combination with surface defects induced by …
Monolithically integrated green-to-orange color InGaN-based nanocolumn photonic crystal LEDs with directional radiation beam profiles
A Yanagihara, K Kishino - Applied Physics Express, 2022 - iopscience.iop.org
In this study, the monolithic integration of LEDs with different emission colors (wavelengths
of 543, 573, and 597 nm) with the directional radiation profiles was demonstrated …
of 543, 573, and 597 nm) with the directional radiation profiles was demonstrated …
GaN‐Based Nanorods/Graphene Heterostructures for Optoelectronic Applications
G Sarau, M Heilmann, M Latzel… - … status solidi (b), 2019 - Wiley Online Library
The insulating character of sapphire, meltback etching of Si, bulk and surface defects
prevented the efficient integration of GaN nanostructures in optoelectronic devices. Here, it …
prevented the efficient integration of GaN nanostructures in optoelectronic devices. Here, it …
[ΒΙΒΛΙΟ][B] III-Nitride Nanowire Deep-Ultraviolet Light Emitting Diodes
B Melanson - 2024 - search.proquest.com
Abstract Deep-Ultraviolet (DUV) Light Emitting Diodes (LEDs) emitting invisible light at
wavelengths below 280 nm, have seen increased research interest over the last decade. Of …
wavelengths below 280 nm, have seen increased research interest over the last decade. Of …
マイクロ LED (μLED) ディスプレイに向けた InGaN/GaN ナノコラムの進展
岸野克巳， 富樫理恵， 大音隆男 - 日本結晶成長学会誌, 2024 - jstage.jst.go.jp
抄録 Using InGaN/GaN-ordered nanocolumn (NC) arrays, two-dimensionally arranged
multicolor (blue, green, yellow, and red) NC micro-LED (μLED) pixels with a luminous area …
multicolor (blue, green, yellow, and red) NC micro-LED (μLED) pixels with a luminous area …