[HTML][HTML] MA2Z4 family heterostructures: Promises and prospects

CC Tho, SD Guo, SJ Liang, WL Ong, CS Lau… - Applied Physics …, 2023 - pubs.aip.org
Recent experimental synthesis of ambient-stable MoSi 2 N 4 monolayer has garnered
enormous research interest. The intercalation morphology of MoSi 2 N 4—composed of a …

Optical wafer defect inspection at the 10 nm technology node and beyond

J Zhu, J Liu, T Xu, S Yuan, Z Zhang… - … Journal of Extreme …, 2022 - iopscience.iop.org
The growing demand for electronic devices, smart devices, and the Internet of Things
constitutes the primary driving force for marching down the path of decreased critical …

Ballistic two-dimensional InSe transistors

J Jiang, L Xu, C Qiu, LM Peng - Nature, 2023 - nature.com
Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …

Conductive polyvinyl alcohol/silver nanoparticles hydrogel sensor with large draw ratio, high sensitivity and high stability for human behavior monitoring

Y Wu, E Chen, X Weng, Z He, G Chang, X Pan… - Engineered …, 2022 - espublisher.com
In recent years, conductive hydrogels have become popular substrates for flexible sensors
because of their good mechanical properties, electrical conductivity, and biocompatibility. In …

Silver nanosheets doped polyvinyl alcohol hydrogel piezoresistive bifunctional sensor with a wide range and high resolution for human motion detection

J Liu, E Chen, Y Wu, H Yang, K Huang… - … Composites and Hybrid …, 2022 - Springer
The soft pressure sensor is a very important element in flexible wearable devices. Its
advantage is that it can adapt to curves and deformed surfaces, and it is widely used in …

A double-layer carbon nanotubes/polyvinyl alcohol hydrogel with high stretchability and compressibility for human motion detection

K Huang, Y Wu, J Liu, G Chang, X Pan… - Engineered …, 2022 - espublisher.com
With the development of technology and the improvement of living standards, hydrogel-
based strain sensors have attracted more attention. However, fabrication of hydrogel strain …

Toward sustainable ultrawide bandgap van der Waals materials: An ab initio screening effort

CW Tan, L Xu, CC Er, SP Chai… - Advanced Functional …, 2024 - Wiley Online Library
The sustainable development of next‐generation device technology is paramount in the face
of climate change and the looming energy crisis. Tremendous effort is made in the discovery …

Performance limit of monolayer MoSi 2 N 4 transistors

X Sun, Z Song, N Huo, S Liu, C Yang, J Yang… - Journal of Materials …, 2021 - pubs.rsc.org
Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …

Performance limit of ultrathin GaAs transistors

Q Li, S Fang, S Liu, L Xu, L Xu, C Yang… - … Applied Materials & …, 2022 - ACS Publications
High-electron-mobility group III–V compounds have been regarded as a promising
successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide …

Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors

Q Li, C Yang, L Xu, S Liu, S Fang, L Xu… - Advanced Functional …, 2023 - Wiley Online Library
Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …