Review of performance metrics of spin qubits in gated semiconducting nanostructures
Abstract This Technical Review collects values of selected performance characteristics of
semiconductor spin qubits defined in electrically controlled nanostructures. The …
semiconductor spin qubits defined in electrically controlled nanostructures. The …
Recent advances in hole-spin qubits
Y Fang, P Philippopoulos, D Culcer… - Materials for …, 2023 - iopscience.iop.org
In recent years, hole-spin qubits based on semiconductor quantum dots have advanced at a
rapid pace. We first review the main potential advantages of these hole-spin qubits with …
rapid pace. We first review the main potential advantages of these hole-spin qubits with …
A single-hole spin qubit
Qubits based on quantum dots have excellent prospects for scalable quantum technology
due to their compatibility with standard semiconductor manufacturing. While early research …
due to their compatibility with standard semiconductor manufacturing. While early research …
Green-assisted synthesis of highly defective nanostructured Fe-doped SnO2: Magnetic and photocatalytic properties evaluation
Here we present a comprehensive characterization of the properties of undoped and Fe-
doped SnO 2 nanoparticles prepared with Syzygium cumini leaves extract. The …
doped SnO 2 nanoparticles prepared with Syzygium cumini leaves extract. The …
Holes outperform electrons in group IV semiconductor materials
A record‐high mobility of holes, reaching 4.3× 106 cm2 V− 1 s− 1 at 300 mK in an epitaxial
strained germanium (s‐Ge) semiconductor, grown on a standard silicon wafer, is reported …
strained germanium (s‐Ge) semiconductor, grown on a standard silicon wafer, is reported …
Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
We investigate hole spin relaxation in the single-and multihole regime in a 2× 2 germanium
quantum dot array. We find spin relaxation times T 1 as high as 32 and 1.2 ms for quantum …
quantum dot array. We find spin relaxation times T 1 as high as 32 and 1.2 ms for quantum …
First-principles hyperfine tensors for electrons and holes in GaAs and silicon
Understanding (and controlling) hyperfine interactions in semiconductor nanostructures is
important for fundamental studies of material properties as well as for quantum information …
important for fundamental studies of material properties as well as for quantum information …
Quantum control of hole spin qubits in double quantum dots
Hole spin qubits in semiconductor quantum dots (QDs) are promising candidates for
quantum information processing due to their weak hyperfine coupling to nuclear spins, and …
quantum information processing due to their weak hyperfine coupling to nuclear spins, and …
Electric field-tuneable crossing of hole Zeeman splitting and orbital gaps in compressively strained germanium semiconductor on silicon
M Myronov, P Waldron, P Barrios, A Bogan… - Communications …, 2023 - nature.com
With the emergence of the quantum computing era, the spin physics of engineered
semiconductor materials with large and tuneable effective g*-factor, which is a measure of …
semiconductor materials with large and tuneable effective g*-factor, which is a measure of …
Light-hole gate-defined spin-orbit qubit
P Del Vecchio, O Moutanabbir - Physical Review B, 2023 - APS
The selective confinement of light holes (LHs) is demonstrated by introducing a low-
dimensional system consisting of a highly tensile-strained Ge quantum well enabling the …
dimensional system consisting of a highly tensile-strained Ge quantum well enabling the …