Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
Recent progress of integrated circuits and optoelectronic chips
Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern
information society. The IC industry has been driven by the so-called “Moore's law” in the …
information society. The IC industry has been driven by the so-called “Moore's law” in the …
Ultra-wide bandgap semiconductor Ga2O3 power diodes
J Zhang, P Dong, K Dang, Y Zhang, Q Yan… - Nature …, 2022 - nature.com
Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …
Radiation damage in wide and ultra-wide bandgap semiconductors
The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …
devices that are used in the automotive, wireless, and industrial power markets, but their …
Role of wide bandgap materials in power electronics for smart grids applications
At present, the energy transition is leading to the replacement of large thermal power plants
by distributed renewable generation and the introduction of different assets. Consequently, a …
by distributed renewable generation and the introduction of different assets. Consequently, a …
Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs
As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …
Ultrawide-bandgap semiconductor AlN crystals: growth and applications
R Yu, G Liu, G Wang, C Chen, M Xu, H Zhou… - Journal of Materials …, 2021 - pubs.rsc.org
In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …
been extensively investigated as potential replacements for current polar c-plane LEDs …
A review of the most recent progresses of state-of-art gallium oxide power devices
H Zhou, J Zhang, C Zhang, Q Feng… - Journal of …, 2019 - iopscience.iop.org
Until very recently, gallium oxide (Ga 2 O 3) has aroused more and more interests in the
area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field …
area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field …
(Ultra) wide-bandgap vertical power FinFETs
FinFET is the backbone device technology for CMOS electronics at deeply scaled
technology nodes per Moore's law. Recently, the FinFET concept has been leveraged to …
technology nodes per Moore's law. Recently, the FinFET concept has been leveraged to …