n-Type polycrystalline germanium layers formed by impurity-doped solid-phase growth
K Nozawa, T Nishida, T Ishiyama… - ACS Applied …, 2023 - ACS Publications
The carrier mobility of polycrystalline Ge thin-film transistors has significantly improved in
recent years, raising hopes for the realization of next-generation electronic devices. Here …
recent years, raising hopes for the realization of next-generation electronic devices. Here …
High thermoelectric performance in polycrystalline GeSiSn ternary alloy thin films
S Maeda, T Ishiyama, T Nishida, T Ozawa… - … Applied Materials & …, 2022 - ACS Publications
Group IV materials are promising candidates for highly reliable and human-friendly thin-film
thermoelectric generators, used for micro-energy harvesting. In this study, we investigated …
thermoelectric generators, used for micro-energy harvesting. In this study, we investigated …
Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review
K Toko, S Maeda, T Ishiyama, K Nozawa… - Advanced Electronic …, 2024 - Wiley Online Library
Flexible thermoelectric generators are leading candidates for next‐generation energy‐
harvesting devices. Although SiGe, an environmentally‐friendly semiconductor, is the most …
harvesting devices. Although SiGe, an environmentally‐friendly semiconductor, is the most …
High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperatures
Despite its long history, synthesizing n-type polycrystalline Ge layers with high-electron
mobility on insulating substrates has been difficult. Based on our recently developed solid …
mobility on insulating substrates has been difficult. Based on our recently developed solid …
High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications
This paper reports on high-performance waveguide-integrated germanium photodiodes for
optical communications applications. 200 mm wafers and production tools were used to …
optical communications applications. 200 mm wafers and production tools were used to …
High-electron-mobility (370 cm2/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization
High-electron-mobility polycrystalline Ge (poly-Ge) thin films are difficult to form because of
their poor crystallinity, defect-induced acceptors and low solid solubility of n-type dopants …
their poor crystallinity, defect-induced acceptors and low solid solubility of n-type dopants …
Defect engineering for shallow n‐type junctions in germanium: Facts and fiction
An overview is given on the status of n‐type dopant activation and diffusion in Ge, based on
a standard ion implantation and annealing scheme. Emphasis is on defect engineering …
a standard ion implantation and annealing scheme. Emphasis is on defect engineering …
High thermoelectric power factors in polycrystalline germanium thin films
T Ozawa, T Imajo, T Suemasu, K Toko - Applied Physics Letters, 2021 - pubs.aip.org
The high potential of polycrystalline Ge as a thin-film thermoelectric material was
demonstrated. We synthesize a polycrystalline Ge layer on an insulating substrate at 450 C …
demonstrated. We synthesize a polycrystalline Ge layer on an insulating substrate at 450 C …
Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
K Kasahara, Y Baba, K Yamane, Y Ando… - Journal of Applied …, 2012 - pubs.aip.org
Using high-quality Fe 3 Si/n+-Ge Schottky-tunnel-barrier contacts, we study spin
accumulation in an n-type germanium (n-Ge) channel. In the three-or two-terminal voltage …
accumulation in an n-type germanium (n-Ge) channel. In the three-or two-terminal voltage …
N-FET with a highly doped source/drain and strain booster
JC Lin, CH Yu - US Patent 8,247,285, 2012 - Google Patents
US PATENT DOCUMENTS 6,271,551 B1 8, 2001 Schmitz et al. 6,605,498 B1 8/2003 Murthy
et al. 6,881,635 B1 4/2005 Chidambarrao et al. 6,977.400 B2 12/2005 Puchner et al …
et al. 6,881,635 B1 4/2005 Chidambarrao et al. 6,977.400 B2 12/2005 Puchner et al …