Single-molecule scale magnetic resonance spectroscopy using quantum diamond sensors

J Du, F Shi, X Kong, F Jelezko, J Wrachtrup - Reviews of Modern Physics, 2024 - APS
Single-molecule technology stands as a powerful tool, enabling the characterization of
intricate structural and dynamic information that would otherwise remain concealed within …

[HTML][HTML] Diamond surface engineering for molecular sensing with nitrogen—vacancy centers

E Janitz, K Herb, LA Völker, WS Huxter… - Journal of Materials …, 2022 - pubs.rsc.org
Quantum sensing using optically addressable atomic-scale defects, such as the nitrogen-
vacancy (NV) center in diamond, provides new opportunities for sensitive and highly …

Robust multicolor single photon emission from point defects in hexagonal boron nitride

TT Tran, C Elbadawi, D Totonjian, CJ Lobo, G Grosso… - ACS …, 2016 - ACS Publications
Hexagonal boron nitride (hBN) is an emerging two-dimensional material for quantum
photonics owing to its large bandgap and hyperbolic properties. Here we report two …

Cavity quantum electrodynamics with color centers in diamond

E Janitz, MK Bhaskar, L Childress - Optica, 2020 - opg.optica.org
Coherent interfaces between optical photons and long-lived matter qubits form a key
resource for a broad range of quantum technologies. Cavity quantum electrodynamics …

Quantum nanophotonics in diamond

T Schröder, SL Mouradian, J Zheng… - Journal of the Optical …, 2016 - opg.optica.org
The past two decades have seen great advances in develo** color centers in diamond for
sensing, quantum information processing, and tests of quantum foundations. Increasingly …

Optical quantum technologies with hexagonal boron nitride single photon sources

ABD Shaik, P Palla - Scientific reports, 2021 - nature.com
Single photon quantum emitters are important building blocks of optical quantum
technologies. Hexagonal boron nitride (hBN), an atomically thin wide band gap two …

Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects

P Deák, B Aradi, M Kaviani, T Frauenheim, A Gali - Physical review B, 2014 - APS
Formation and excitation energies as well charge transition levels are determined for the
substitutional nitrogen (N s), the vacancy (V), and related point defects (NV, NVH, N 2, N 2 V …

Narrow-linewidth homogeneous optical emitters in diamond nanostructures via silicon ion implantation

RE Evans, A Sipahigil, DD Sukachev, AS Zibrov… - Physical Review …, 2016 - APS
The negatively charged silicon-vacancy (SiV−) center in diamond is a bright source of
indistinguishable single photons and a useful resource in quantum-information protocols …

Coherent optical transitions in implanted nitrogen vacancy centers

Y Chu, NP de Leon, BJ Shields, B Hausmann… - Nano …, 2014 - ACS Publications
We report the observation of stable optical transitions in nitrogen-vacancy (NV) centers
created by ion implantation. Using a combination of high temperature annealing and …

Isotope engineering of silicon and diamond for quantum computing and sensing applications

KM Itoh, H Watanabe - MRS communications, 2014 - cambridge.org
Some of the stable isotopes of silicon and carbon have zero nuclear spin, whereas many of
the other elements that constitute semiconductors consist entirely of stable isotopes that …