Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …

As the challenges in continued scaling of the integrated circuit technology escalate every
generation, there is an urgent need to find viable solutions for both the front-end-of-line …

Polyhedral oligomeric silsesquioxanes (POSS) are of considerable interest as building
blocks for preparing low‐k materials. To date T8 POSS has been extensively investigated …

The performance of modern chips is strongly related to the multi-layer interconnect structure
that interfaces the semiconductor layer with the outside world. The resulting demand to …

Interconnect resistance and reliability have emerged as critical factors limiting the
performance of advanced CMOS circuits. With the slowdown of transistor scaling …

Reliability challenges of candidate metal systems to replace traditional Cu wiring in future
interconnects are discussed. From a reliability perspective, a key opportunity is …

Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits.
Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the …

We address RC scaling trends and predict the performance benefits of advanced
metallization options with respect to conventional Cu/low-k interconnects. The range of …

Ruthenium is one of the most promising candidates to replace tantalum and titanium based
diffusion barrier layers in microelectronics. Its unique properties allow the deposition of …

We investigate the dependence of Cu via resistance on via dimensions, shape,
misalignment, and Co via prefill level by means of a novel resistivity model, calibrated to …