Efficient proximity effect correction using fast multipole method with unequally spaced grid for electron beam lithography
W Yao, H Zhao, C Hou, W Liu, H Xu… - … on Computer-Aided …, 2022 - ieeexplore.ieee.org
In electron beam lithography (EBL), the proximity effect seriously influences pattern
resolution under high-precision conditions. Mainstream proximity effect correction (PEC) …
resolution under high-precision conditions. Mainstream proximity effect correction (PEC) …
Fast and accurate proximity effect correction algorithm based on pattern edge shape adjustment for electron beam lithography
W Yao, H Xu, H Zhao, M Tao, J Liu - Microelectronics Journal, 2023 - Elsevier
This paper proposes a fast and accurate shape-based proximity effect correction (PEC)
algorithm based on pattern edge shape adjustment (PESA) for electron beam lithography …
algorithm based on pattern edge shape adjustment (PESA) for electron beam lithography …
Accurate and Efficient Proximity Effect Correction for Electron Beam Lithography Based on Multilayer Perceptron Neural Network
W Yao, Y Yang, J Liu, H Xu, S Zhang… - 2022 International …, 2022 - ieeexplore.ieee.org
This paper proposes a proximity effect correction (PEC) method for electron beam
lithography (EBL) using multilayer perceptron (MLP) neural network (NN). By leveraging the …
lithography (EBL) using multilayer perceptron (MLP) neural network (NN). By leveraging the …
Flexible Nanofabrication Equipment: E-beam Lithography System Based on SEM
S Wei, L Dai, J Zhang - TELKOMNIKA Indonesian Journal of …, 2014 - journal.esperg.com
Electron beam lithography (EBL) is widely used in nano-scale device fabrication and
research due to high resolution and excellent flexibility. In this paper, nanometer EBL system …
research due to high resolution and excellent flexibility. In this paper, nanometer EBL system …
TransUNet-based end-to-end proximity effect correction for electron beam lithography
H Huang, H Wang, Y Liu, S Li - Eighth International Workshop …, 2024 - spiedigitallibrary.org
Electron Beam Lithography (EBL) has advantages in high resolution imaging. However, its
resolution was limited by the proximity effect due to electron backscattering in solid …
resolution was limited by the proximity effect due to electron backscattering in solid …
Accurate and Efficient Proximity Effect Correction for Electron Beam Lithography Based on Distributed Parallel Computing
H Zhao, W Yao, H Xu, S Zhang, Y Yang… - 2022 International …, 2022 - ieeexplore.ieee.org
This paper proposes an efficient proximity effect correction (PEC) method for electron beam
lithography (EBL) based on distributed parallel computing. To facilitate PEC calculations of …
lithography (EBL) based on distributed parallel computing. To facilitate PEC calculations of …
[PDF][PDF] 电子束光刻 “自主可控” EDA 软件 HNU-EBL
姚文泽， 徐宏成， 赵浩杰， 刘薇， 侯程阳… - 湖南大学学报 (自然 …, 2022 - ebeam.com.cn
为模拟和优化电子束光刻(Electron Beam Lithography, EBL) 工艺过程, 提高电子束光刻版图
加工质量, 依托湖南大学(Hunan University, HNU) 开发了一套电子束光刻的“自主可控” …
加工质量, 依托湖南大学(Hunan University, HNU) 开发了一套电子束光刻的“自主可控” …
[PDF][PDF] Detección de infrarrojo lejano con bolómetros micromaquinados.
JJ Zárate - 2013 - core.ac.uk
En este trabajo se abordó el estudio de un nuevo modelo de sensor infrarrojo. Estos
dispositivos permiten inferir la temperatura de una fuente a partir de la radiación térmica …
dispositivos permiten inferir la temperatura de una fuente a partir de la radiación térmica …