GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Gallium nitride-based complementary logic integrated circuits
Owing to its energy efficiency, silicon complementary metal–oxide–semiconductor (CMOS)
technology is the current driving force of the integrated circuit industry. Silicon's narrow …
technology is the current driving force of the integrated circuit industry. Silicon's narrow …
A Review on Modular Converter Topologies Based on WBG Semiconductor Devices in Wind Energy Conversion Systems
A Athwer, A Darwish - Energies, 2023 - mdpi.com
This paper presents a comprehensive review on the employment of wide bandgap (WBG)
semiconductor power devices in wind energy conversion systems (WECSs). Silicon-carbide …
semiconductor power devices in wind energy conversion systems (WECSs). Silicon-carbide …
GaN power integration technology and its future prospects
The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …
implementing monolithic power integrated circuits. This article presents a comprehensive …
An enhancement-mode GaN p-FET with improved breakdown voltage
In this letter, an enhancement-mode (E-mode) GaN p-channel field-effect transistors (p-
FETs) with current density of− 5.6 mA/mm and ratio of 10 6 was demonstrated on a p …
FETs) with current density of− 5.6 mA/mm and ratio of 10 6 was demonstrated on a p …
A GaN complementary FET inverter with excellent noise margins monolithically integrated with power gate-injection HEMTs
J Chen, Z Liu, H Wang, Y He, X Zhu… - … on Electron Devices, 2021 - ieeexplore.ieee.org
A GaN complementary field-effect transistor (FET) inverter monolithically integrated with
power gate-injection high-electron-mobility transistors (HEMTs) was realized on a Si …
power gate-injection high-electron-mobility transistors (HEMTs) was realized on a Si …
Building blocks for GaN power integration
GaN technology is on the advance for the use in power ICs thanks to space-saving
integrated circuit components and the increasing number of integrated devices. This work …
integrated circuit components and the increasing number of integrated devices. This work …
Monolithically integrated GaN ring oscillator based on high-performance complementary logic inverters
A gallium nitride (GaN) ring oscillator based on high-performance one-chip complementary
logic (CL) inverters is demonstrated on a conventional p-GaN gate power HEMT (high …
logic (CL) inverters is demonstrated on a conventional p-GaN gate power HEMT (high …
High-Performance E-Mode p-Channel GaN FinFET on Silicon Substrate With High ION/IOFF and High Threshold Voltage
H Du, Z Liu, L Hao, H Su, T Zhang… - IEEE Electron …, 2022 - ieeexplore.ieee.org
In this letter, we report on demonstrating high-performance enhancement-mode (E-mode)-
channel GaN Fin Field-Effect Transistors (FinFETs) fabricated on a proposed …
channel GaN Fin Field-Effect Transistors (FinFETs) fabricated on a proposed …
Threshold Voltage Instability of Enhancement-Mode GaN Buried p-Channel MOSFETs
GaN-channel field-effect transistors (-FETs) are essential components for implementing the
energy-efficient complementary logic circuitry for monolithic GaN power integration. This …
energy-efficient complementary logic circuitry for monolithic GaN power integration. This …