Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied
unraveling the different causes behind this phenomenon. Among them, oxygen related …

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices
requires integration of ferroelectric and semiconductor materials. The emergence of hafnium …

Device applications of ferroelectrics have not only utilized the switchable polarization but
also adopted myriads of emerging physical properties. In particular, ferroelectrics in ultra …

Hafnia (HfO2) is a promising material for emerging chip applications due to its high-κ
dielectric behavior, suitability for negative capacitance heterostructures, scalable …

Two-dimensional ferroelectric monolayers are promising candidates for compact memory
devices and flexible electronics. Here, through first-principles calculations, we predict room …

Abstract Fluorite-structured Hf 0.5 Zr 0.5 O 2 (HZO) thin films have attracted considerable
attention in recent years because of their good CMOS-compatibility and robust …

The endurance characteristic of Zr-doped HfO2 (HZO)-based metal–ferroelectric–metal
(MFM) capacitors fabricated under various deposition/annealing temperatures in the atomic …

Ferroelectric hafnia exhibits promising robust polarization and silicon compatibility for
ferroelectric devices. Unfortunately, it suffers from difficult polarization switching. Methods to …

Hf 0.5 Zr 0.5 O 2 (HZO) thin films are promising for applications in ferroelectric memories.
However, these materials often face challenges, such as polarization fluctuations (eg …