From oxide epitaxy to freestanding membranes: Opportunities and challenges
Motivated by the growing demand to integrate functional oxides with dissimilar materials,
numerous studies have been undertaken to detach a functional oxide film from its original …
numerous studies have been undertaken to detach a functional oxide film from its original …
Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design
Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal
for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics …
for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics …
Host-to-Activator Energy Transfer Developed by Eu3+ Do** at B Sites in Perovskite-Type Strontium Stannate Phosphor
K Ueda, T Ogata, K Nakamura… - The Journal of Physical …, 2024 - ACS Publications
Site-selective do** and site-dependent luminescence of Eu3+ were examined in the
perovskite-type strontium stannate host, SrSnO3, which is reported as a transparent oxide …
perovskite-type strontium stannate host, SrSnO3, which is reported as a transparent oxide …
Atomically Resolved Surface Reconstruction of WO3 (002)
J Cao, J **a, X Li, Y Li, L Tian, C Liu, Z Zhang, S Cai… - Small, 2025 - Wiley Online Library
The rearrangement of surface atoms in oxide nanocrystals, namely surface reconstruction,
plays an important role in improving the physical and chemical properties of metal oxides …
plays an important role in improving the physical and chemical properties of metal oxides …
A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress
E Živanović, S Veljković, N Mitrović, I Jovanović… - Micromachines, 2024 - mdpi.com
This study aimed to comprehensively understand the performance and degradation of both
p-and n-channel vertical double diffused MOS (VDMOS) transistors under bias temperature …
p-and n-channel vertical double diffused MOS (VDMOS) transistors under bias temperature …