Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …

Two-dimensional intrinsic ferromagnets with high Curie temperature and large
perpendicular magnetic anisotropy (PMA) are promising candidates for data storage and …

Heusler alloys combined with MgO interfaces exhibit interfacial perpendicular magnetic
anisotropy, making them attractive for energy-efficient spintronic technologies. However …

Interfacial perpendicular magnetic anisotropy in the MgO/Co 2 FeAl heterostructure is
desired for technological applications, while the origin of the large interfacial anisotropy …

Perpendicular magnetic anisotropy (PMA) in ultrathin magnetic structures is a key ingredient
for the development of electrically controlled spintronic devices. Due to their relatively large …

We report perpendicular magnetic anisotropy (PMA) induced at Co 2 FeAl/MgAl 2 O 4 (001)
epitaxial interfaces prepared by magnetron sputtering and post-oxidation of MgAl layers. A …

The modulation of magnetic anisotropy is very promising for the realization of energy-
efficient memory devices. In this work, we investigate the effects of interfacial oxidation and …

In this work, employing density functional theory based electronic structure calculations, we
search for an alternative to MgO as a spacer layer in a magnetic tunneling junction (MTJ) …

The interfacial atomic structure of epitaxial ultrathin Co 2 FeAl/MgO (001) heterostructures,
which is related to the interface-induced perpendicular magnetic anisotropy (PMA), was …

Novel spin-electronic devices require electrodes that inject electrons with both high spin-
polarization and perpendicular magnetic anisotropy (PMA). Several full-Heusler compounds …