High brightness AlGaInP light-emitting diodes Page 1 IEEE JOURNAL ON SELECTED
TOPICS IN QUANTUM ELECTRONICS, VOL. 8, NO. 2, MARCH/APRIL 2002 321 High …

AlGaInP lattice matched to GaAs is suited for light-emitting diodes (LEDs) operating in the
red, orange, yellow, and yellow–green wavelength range. Such long-wavelength visible …

A truncated-inverted-pyramid (TIP) chip geometry provides substantial improvement in light
extraction efficiency over conventional AlGaInP/GaP chips of the same active junction area …

Electromagnetic band structure can produce either an enhancement or a suppression of
spontaneous emission from two-dimensional (2-D) photonic crystal thin films. We believe …

Red LEDs were grown by metalorganic chemical vapor deposition with a high active region
temperature of 870 C on a relaxed InGaN/GaN superlattice buffer. The buffer was 100 …

A highly relaxed InGaN buffer layer was demonstrated over a full two-inch c-plane sapphire
substrate by metalorganic chemical vapor deposition. The InGaN buffer layer was grown on …

This review summarises the recent progress in development of advanced high brightness
and white light emitting diodes (LEDs) that have been reported by several laboratories. Two …

A field as diverse as optoelectronics needs a reference that is equally versatile. From basic
physics and light sources to devices and state-of-the-art applications, the Handbook of …

Protein-based material design provides great advantages to develo** smart biomaterials
with tunable structures and desired functions. They have been widely used in many …

By introducing a single-quantum-well active layer and a high-Al-content carrier blocking
layer, the output power of an AlGaN-based ultraviolet light-emitting diode has been …