Method for finding mechanism and activation energy of magnetic transitions, applied to skyrmion and antivortex annihilation

PF Bessarab, VM Uzdin, H Jónsson - Computer Physics Communications, 2015 - Elsevier
A method for finding minimum energy paths of transitions in magnetic systems is presented.
The path is optimized with respect to orientation of the magnetic vectors while their …

Emerging materials and devices in spintronic integrated circuits for energy-smart mobile computing and connectivity

SH Kang, K Lee - Acta Materialia, 2013 - Elsevier
A spintronic integrated circuit (IC) is made of a combination of a semiconductor IC and a
dense array of nanometer-scale magnetic tunnel junctions. This emerging field is of growing …

[HTML][HTML] Disruptive effect of Dzyaloshinskii-Moriya interaction on the magnetic memory cell performance

J Sampaio, AV Khvalkovskiy, M Kuteifan… - Applied Physics …, 2016 - pubs.aip.org
In order to increase the thermal stability of a magnetic random access memory cell, materials
with high spin-orbit interaction are often introduced in the storage layer. As a side effect, a …

Two-barrier stability that allows low-power operation in current-induced domain-wall motion

KJ Kim, R Hiramatsu, T Koyama, K Ueda… - Nature …, 2013 - nature.com
Energy barriers in magnetization reversal dynamics have long been of interest because the
barrier height determines the thermal stability of devices as well as the threshold force …

Reversal mechanism, switching field distribution, and dipolar frustrations in Co/Pt bit pattern media based on auto-assembled anodic alumina hexagonal nanobump …

T Hauet, L Piraux, SK Srivastava, VA Antohe, D Lacour… - Physical Review B, 2014 - APS
We fabricated a perpendicularly magnetized bit pattern media using a hexagonally close-
packed auto-assembled anodic alumina template with 100 nm and 50 nm periods by …

Tuning the spin-flop transition in perpendicularly magnetized synthetic antiferromagnets by swift heavy Fe ions irradiation

J Yun, Y Sheng, X Guo, B Zheng, P Chen, Y Cao… - Physical Review B, 2021 - APS
Synthetic antiferromagnets (SAFs) with perpendicular magnetic anisotropy (PMA) have
recently attracted intensive attention for their potential applications in domain-wall-based …

Role of dipolar interactions on the thermal stability of high-density bit-patterned media

N Eibagi, JJ Kan, FE Spada… - IEEE Magnetics …, 2012 - ieeexplore.ieee.org
We have characterized the magnetic reversal and thermal stability of bit-patterned media
with a composite structure of [Co (0.25 nm)/Pd (0.7 nm)] 5/Fe (X)/[Pd (0.7 nm)/Co (0.25 nm)] …

Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

L Thomas, G Jan, S Le, YJ Lee, H Liu… - 2015 IEEE …, 2015 - ieeexplore.ieee.org
Current understanding of thermal stability of perpendicular STT-MRAM based on device-
level data suggests that the thermal stability factor A is almost independent of device …

[HTML][HTML] Ion beam etching dependence of spin–orbit torque memory devices with switching current densities reduced by Hf interlayers

H Ren, SY Wu, JZ Sun, EE Fullerton - APL Materials, 2021 - pubs.aip.org
We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque
switching devices with low switching current densities. Critical parameters in the fabrication …

Cross-sectional area dependence of tunnel magnetoresistance, thermal stability, and critical current density in MTJ

AH Lone, S Shringi, K Mishra… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Tunnel magnetoresistance (TMR), thermal stability, and critical switching current are
important metrics of a magnetic tunnel junction (MTJ). In this work, a detailed study of these …