A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
The band-modulation and sharp-switching mechanisms in Z 2-FET device operated as a
capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the …
capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the …
Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
Dynamic random access memory (DRAM) cells are commonly used in electronic devices
and are formed from a single transistor and capacitor. Alternative approaches, which are …
and are formed from a single transistor and capacitor. Alternative approaches, which are …
Understanding of feedback field-effect transistor and its applications
Feedback field-effect transistors (FBFETs) are devices based on a positive feedback loop in
which the electrons and holes in the channel region act on the energy states of the potential …
which the electrons and holes in the channel region act on the energy states of the potential …
-FET as Capacitor-Less eDRAM Cell For High-Density Integration
C Navarro, M Duan, MS Parihar… - … on Electron Devices, 2017 - ieeexplore.ieee.org
2-D numerical simulations are used to demonstrate the Z 2-FET as a competitive embedded
capacitor-less dynamic random access memory cell for low-power applications …
capacitor-less dynamic random access memory cell for low-power applications …
A review of sharp-switching band-modulation devices
S Cristoloveanu, J Lacord, S Martinie, C Navarro… - Micromachines, 2021 - mdpi.com
This paper reviews the recently-developed class of band-modulation devices, born from the
recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body …
recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body …
Experimental Demonstration of Operational Z2-FET Memory Matrix
In this letter, a functional Z 2-FET DRAM memory matrix is experimentally demonstrated for
the first time. Word-level operation with simultaneous reading and programming accesses is …
the first time. Word-level operation with simultaneous reading and programming accesses is …
The floating body effect of a WSe 2 transistor with volatile memory performance
ZP Wang, P **e, JY Mao, R Wang, JQ Yang… - Materials …, 2022 - pubs.rsc.org
The floating body effect in Meta-Stable-Dip RAM (MSDRAM) has been broadly employed in
implementing single-transistor capacitor-less (1T0C) dynamic random access memory …
implementing single-transistor capacitor-less (1T0C) dynamic random access memory …
Capacitor-Less 4F DRAM Using Vertical InGaAs Junction for Ultimate Cell Scalability
In this work, we demonstrated capacitor-less 4F2 2-terminal InGaAs npn junction DRAM
through careful device design. Using epitaxially grown InGaAs which have a steep junction …
through careful device design. Using epitaxially grown InGaAs which have a steep junction …
Reliability study of thin-oxide zero-ionization, zero-swing FET 1T-DRAM memory cell
The experimental time-dependent dielectric breakdown and ON voltage reliability of
advanced FD-SOI Z 2-FET memory cells are characterized for the first time. The front-gate …
advanced FD-SOI Z 2-FET memory cells are characterized for the first time. The front-gate …
InGaAs capacitor-less DRAM cells TCAD demonstration
2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less
dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is …
dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is …