The global demand for data storage and processing has increased exponentially in recent
decades. To respond to this demand, research efforts have been devoted to the …

A unified picture of different application areas for incipient metals is presented. This
unconventional material class includes several main‐group chalcogenides, such as GeTe …

In spite of the prominent role played by phase change materials in information technology, a
detailed understanding of the central property of such materials, namely the phase change …

Abstract Ge–Sb–Te (“GST”) alloys are leading phase‐change materials for digital memories
and neuro‐inspired computing. Upon fast crystallization, these materials form rocksalt‐like …

Phase‐change random‐access memory (PCRAM) devices suffer from pronounced
resistance drift originating from considerable structural relaxation of phase‐change …

Via fast differential scanning calorimetry using an Au-based glass as an example, we show
that metallic glasses should be classified into two types of amorphous/monolithic glass. The …

Controlling crystallization kinetics is key to overcome the temperature–time dilemma in
phase change materials employed for data storage. While the amorphous phase must be …

Phase‐change random‐access memory relies on the reversible crystalline‐glassy phase
change in chalcogenide thin films. In this application, the speed of crystallization is critical for …

Published values of crystal growth rates are compared for supercooled glass-forming liquids
undergoing congruent freezing at a planar crystal-liquid interface. For the purposes of …

Abstract The chalcogenide Ge 2 Sb 2 Te 5 (GST) is of interest for use in phase-change
memory. Crystallization is the rate-limiting step for memory operation, and can be …