Multi-component ZnO alloys: Bandgap engineering, hetero-structures, and optoelectronic devices

T Zhang, M Li, J Chen, Y Wang, L Miao, Y Lu… - Materials Science and …, 2022 - Elsevier
The desire for develo** ultraviolet optoelectronic devices has prompted extensive studies
toward wide-bandgap semiconductor ZnO and its related alloys. Bandgap engineering as …

Cathodoluminescent light sources: status and prospects

AS Bugaev, VB Kireev, EP Sheshin… - Physics …, 2015 - iopscience.iop.org
A feasible alternative to current energy-saving light sources is environmentally friendly new-
generation cathodoluminescent light sources (CLSs) based on luminescence produced by …

The impact of Mg content on the structural, electrical and optical properties of MgZnO alloys: A first principles study

Y Hu, B Cai, Z Hu, Y Liu, S Zhang, H Zeng - Current Applied Physics, 2015 - Elsevier
The structural, electronic and optical properties of wurtzite MgZnO with Mg concentration
ranging from 0 to 0.5 are studied using the first principle calculations. It's found that the …

ZnO-based deep-ultraviolet light-emitting devices

YJ Lu, ZF Shi, CX Shan, DZ Shen - Chinese Physics B, 2017 - iopscience.iop.org
Abstract Deep-ultraviolet (DUV) light-emitting devices (LEDs) have a variety of potential
applications. Zinc-oxide-based materials, which have wide bandgap and large exciton …

The structural, electrical and optical properties of Mg-doped ZnO with different interstitial Mg concentration

Y Hu, H Zeng, J Du, Z Hu, S Zhang - Materials Chemistry and Physics, 2016 - Elsevier
Through first principle calculations, we studied the structural, electronic and optical
properties of ZnO doped by interstitial Mg. With the increase of Mg content (x), the …

Heteroepitaxial growth of high Mg-content single-phased W-MgZnO on ZnO matrixes in various nucleation states for solar-blind and visible-blind dual-band UV …

X Zhou, D Jiang, M Zhao, W Wang - Materials Research Bulletin, 2021 - Elsevier
High Mg-content single-phase wurtzite Mg 0.51 Zn 0.49 O (W-Mg 0.51 Zn 0.49 O) films were
realized by radio frequency (RF) magnetron sputtering technique on quartz (SiO 2) …

Vacuum ultraviolet field emission lamp utilizing KMgF3 thin film phosphor

M Yanagihara, MZ Yusop, M Tanemura, S Ono… - Apl Materials, 2014 - pubs.aip.org
We demonstrated a field emission lamp by employing a KMgF3 thin film as a solidstate
vacuum ultraviolet phosphor. The output power of the lamp was 2 μW at an extraction …

Realization of cathodoluminescence in the 180 nm spectral range by suppressing thermal stress in mist chemical vapor deposition of rocksalt-structured MgZnO films

K Ogawa, W Kosaka, H Kusaka, K Kudo… - Japanese Journal of …, 2024 - iopscience.iop.org
Rocksalt-structured (RS) Mg x Zn 1− x O films with x= 0.65–1.0 were grown on MgO (100)
substrate using the mist CVD method. A comparative study of the RS-Mg 0.92 Zn 0.08 O …

Enhanced performance of MgZnO flexible ultraviolet photodetectors

J Sun, M Zhao, D Jiang - Journal of Materials Science: Materials in …, 2022 - Springer
The flexible ultraviolet (UV) photodetector (PD) has stable performance under mechanical
flexibility to be applied on uneven surfaces. This provides a lot of freedom for redesigning …

Bandgap tunability and local structure of MgxZn1–xO (0 ≤ x ≤ 1) thin films grown by RF magnetron co-sputtering

SK Chetia, P Rajput, RS Ajimsha, R Singh, AK Das… - Applied Physics A, 2022 - Springer
Mg x Zn1–x O (0≤ x≤ 1) thin films with wide range bandgap tunability from~ 3.28 to 6.7 eV
were grown on (0001) Sapphire substrates by RF magnetron co-sputtering method …