Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical
data communications, particularly short range. It also is being prospected for applications in …

Abstract Si–Ge–Sn alloys are offering unusual material properties with a strong potential to
add a variety of functionalities to advanced CMOS technology. Being a group IV alloy …

Efficient p‐and n‐type in situ do** of compressively strained germanium tin (Ge1‐xSnx)
semiconductor epilayers, grown by chemical vapor deposition on a standard Si (001) …

Epitaxy of semiconductor-based quantum well structures is a challenging task since it
requires precise control of the deposition at the submonolayer scale. In the case of Ge1–x …

The electrical and optical material properties of epitaxial Ge 1− x Sn x and Si y Ge 1− x− y
Sn x are of high interest for novel device applications. However, the limited Sn solubility in …

The Si-based mid-infrared photonics is an emerging technology in which group-IV
germanium–tin (Ge1–x Sn x) binary alloys can play a fundamental role in the development …

Localization behaviour is a characteristic feature of the p-type GeSn quantum well (QW)
system in a metal–insulator–semiconductor device. The transition to strongly localized …

Five structures of Ge2H2 and Ge2H2+ are investigated in this study. Optimized geometries
at the CCSD (T)/cc-pwCVQZ-PP level of theory were obtained. Focal point analyses were …

Growth of GeSn films directly on Si substrates is desirable for integrated photonics
applications since the absence of an intervening buffer layer simplifies device fabrication …

The low thermal conductivity of a material is a key essential parameter for its potential
application in high‐performance thermoelectric devices. Unprecedently low thermal …