[HTML][HTML] Observation of field-free spin–orbit torque switching in a single crystalline (Ga, Mn)(As, P) ferromagnetic film with perpendicular anisotropy
We report the observation of field-free spin–orbit torque (SOT) magnetization switching in a
single layer of (Ga, Mn)(As, P) ferromagnetic film exhibiting perpendicular magnetic …
single layer of (Ga, Mn)(As, P) ferromagnetic film exhibiting perpendicular magnetic …
Magnetic anisotropy of ferromagnetic films with graded composition
We have investigated magnetic anisotropy properties of ferromagnetic semiconductor Ga 1−
x Mn x As 1− y P y films grown by molecular beam epitaxy on GaAs substrates with constant …
x Mn x As 1− y P y films grown by molecular beam epitaxy on GaAs substrates with constant …
Exchange bias in ferromagnetic bilayers with orthogonal anisotropies: the case of GaMnAsP/GaMnAs combination
We report the observation of exchange bias in a ferromagnetic Ga0. 94Mn0. 06As0. 77P0.
23/Ga0. 94Mn0. 06As bilayer, in which the easy axis in one layer is oriented out-of-plane …
23/Ga0. 94Mn0. 06As bilayer, in which the easy axis in one layer is oriented out-of-plane …
Anisotropy of negative magnetoresistance in GaMnAs epitaxial layers
AS Gazizulina, AA Nasirov, AA Nebesniy… - Semiconductors, 2021 - Springer
The temperature dependence of the anisotropy of the magnetotransport properties of
GaMnAs epitaxial layers featuring ferromagnetic order is investigated. The anisotropy of …
GaMnAs epitaxial layers featuring ferromagnetic order is investigated. The anisotropy of …
[HTML][HTML] Effect of annealing on the magnetic anisotropy of GaMnAsP layers with graded P concentration
We have investigated the effect of annealing on the magnetic anisotropy of MBE-grown
GaMnAs 1− y P y film in which phosphorus content varies from 0% to 24% along the growth …
GaMnAs 1− y P y film in which phosphorus content varies from 0% to 24% along the growth …
Effect of Be Co-Do** on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers
The effect of beryllium co-do** on the magnetoresistance anisotropy in the GaMnAs layer
grown via lowtemperature molecular beam epitaxy is investigated in this paper. The …
grown via lowtemperature molecular beam epitaxy is investigated in this paper. The …
Interlayer exchange coupling in (Ga, Mn) As ferromagnetic semiconductor multilayer systems
This paper describes interlayer exchange coupling (IEC) phenomena in ferromagnetic
multilayer structures, focusing on the unique IEC features observed in ferromagnetic …
multilayer structures, focusing on the unique IEC features observed in ferromagnetic …
Anisotropic Magnetoresistance of Gamnas: Be
The effect of co-do** with Be on the magnetic anisotropy in Ga0. 972Mn0. 028As epitaxial
layer has been studied by means magnetoresistance measurements. It was shown that …
layer has been studied by means magnetoresistance measurements. It was shown that …
Анизотропия отрицательного магнетосопротивления в эапитаксиальных слоях GaMnAs
АС Газизулина, АА Насиров, АА Небесный… - Физика и техника …, 2021 - mathnet.ru
Исследована температурная зависимость анизотропии магнитотранспортных свойств
эпитаксиальных слоев GaMnAs, находящихся в состоянии ферромагнитного …
эпитаксиальных слоев GaMnAs, находящихся в состоянии ферромагнитного …