[HTML][HTML] Observation of field-free spin–orbit torque switching in a single crystalline (Ga, Mn)(As, P) ferromagnetic film with perpendicular anisotropy

KJ Lee, S Lee, X Liu, M Dobrowolska, JK Furdyna - APL Materials, 2024 - pubs.aip.org
We report the observation of field-free spin–orbit torque (SOT) magnetization switching in a
single layer of (Ga, Mn)(As, P) ferromagnetic film exhibiting perpendicular magnetic …

Magnetic anisotropy of ferromagnetic films with graded composition

SK Bac, S Lee, X Liu, M Dobrowolska, BA Assaf… - Physical Review …, 2021 - APS
We have investigated magnetic anisotropy properties of ferromagnetic semiconductor Ga 1−
x Mn x As 1− y P y films grown by molecular beam epitaxy on GaAs substrates with constant …

Exchange bias in ferromagnetic bilayers with orthogonal anisotropies: the case of GaMnAsP/GaMnAs combination

S Choi, SK Bac, X Liu, S Lee, S Dong… - Scientific reports, 2019 - nature.com
We report the observation of exchange bias in a ferromagnetic Ga0. 94Mn0. 06As0. 77P0.
23/Ga0. 94Mn0. 06As bilayer, in which the easy axis in one layer is oriented out-of-plane …

Anisotropy of negative magnetoresistance in GaMnAs epitaxial layers

AS Gazizulina, AA Nasirov, AA Nebesniy… - Semiconductors, 2021 - Springer
The temperature dependence of the anisotropy of the magnetotransport properties of
GaMnAs epitaxial layers featuring ferromagnetic order is investigated. The anisotropy of …

[HTML][HTML] Effect of annealing on the magnetic anisotropy of GaMnAsP layers with graded P concentration

SK Bac, S Lee, X Liu, M Dobrowolska… - Journal of Vacuum …, 2023 - pubs.aip.org
We have investigated the effect of annealing on the magnetic anisotropy of MBE-grown
GaMnAs 1− y P y film in which phosphorus content varies from 0% to 24% along the growth …

Effect of Be Co-Do** on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

PB Parchinskiy, AS Gazizulina, AA Nasirov - Russian Physics Journal, 2023 - Springer
The effect of beryllium co-do** on the magnetoresistance anisotropy in the GaMnAs layer
grown via lowtemperature molecular beam epitaxy is investigated in this paper. The …

Interlayer exchange coupling in (Ga, Mn) As ferromagnetic semiconductor multilayer systems

S Lee, S Chung, H Lee, X Liu… - Journal of …, 2019 - iopscience.iop.org
This paper describes interlayer exchange coupling (IEC) phenomena in ferromagnetic
multilayer structures, focusing on the unique IEC features observed in ferromagnetic …

Anisotropic Magnetoresistance of Gamnas: Be

P Parchinskiy, AS Gazizulina, AA Nasirov… - Available at SSRN …, 2023 - papers.ssrn.com
The effect of co-do** with Be on the magnetic anisotropy in Ga0. 972Mn0. 028As epitaxial
layer has been studied by means magnetoresistance measurements. It was shown that …

Анизотропия отрицательного магнетосопротивления в эапитаксиальных слоях GaMnAs

АС Газизулина, АА Насиров, АА Небесный… - Физика и техника …, 2021 - mathnet.ru
Исследована температурная зависимость анизотропии магнитотранспортных свойств
эпитаксиальных слоев GaMnAs, находящихся в состоянии ферромагнитного …