A comprehensive review of advanced trends: from artificial synapses to neuromorphic systems with consideration of non-ideal effects

K Kim, MS Song, H Hwang, S Hwang… - Frontiers in Neuroscience, 2024 - frontiersin.org
A neuromorphic system is composed of hardware-based artificial neurons and synaptic
devices, designed to improve the efficiency of neural computations inspired by energy …

Nonvolatile capacitive synapse: device candidates for charge domain compute-in-memory

S Yu, YC Luo, TH Kim, O Phadke - IEEE Electron Devices …, 2023 - ieeexplore.ieee.org
Compute-in-memory (CIM) has emerged as a compelling approach to address the ever-
increasing demand for energy-efficient computing for edge artificial intelligence (AI) …

Ferroelectric capacitive memories: devices, arrays, and applications

Z Zhou, L Jiao, Z Zheng, Y Chen, K Han, Y Kang… - Nano …, 2025 - Springer
Ferroelectric capacitive memories (FCMs) utilize ferroelectric polarization to modulate
device capacitance for data storage, providing a new technological pathway to achieve two …

When in-memory computing meets spiking neural networks—A perspective on device-circuit-system-and-algorithm co-design

A Moitra, A Bhattacharjee, Y Li, Y Kim… - Applied Physics …, 2024 - pubs.aip.org
This review explores the intersection of bio-plausible artificial intelligence in the form of
spiking neural networks (SNNs) with the analog in-memory computing (IMC) domain …

Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET with IGZO Channel Utilizing Postdeposition Annealing

P Xu, P Jiang, Y Yang, T Gong, W Wei… - IEEE Electron …, 2024 - ieeexplore.ieee.org
With high potential for back-end-of-line (BEOL) integration, HfO2-based FeFETs with
amorphous oxide semiconductor (AOS) channels have shown impressive application …

From light sensing to adaptive learning: hafnium diselenide reconfigurable memcapacitive devices in neuromorphic computing

B Alqahtani, H Li, AM Syed, N El-Atab - Light: Science & Applications, 2025 - nature.com
Advancements in neuromorphic computing have given an impetus to the development of
systems with adaptive behavior, dynamic responses, and energy efficiency characteristics …

Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads

E Yu, GK K, U Saxena, K Roy - Scientific Reports, 2024 - nature.com
This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric
Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate …

A cross-layer framework for design space and variation analysis of non-volatile ferroelectric capacitor-based compute-in-memory accelerators

YC Luo, J Read, A Lu, S Yu - 2024 29th Asia and South Pacific …, 2024 - ieeexplore.ieee.org
Using non-volatile “capacitive” crossbar arrays for compute-in-memory (CIM) offers higher
energy and area efficiency compared to “resistive” crossbar arrays. However, the impact of …

Small Signal Capacitance in Ferroelectric Hafnium Zirconium Oxide: Mechanisms and Physical Insights

R Koduru, A Saha, M Frank, S Gupta - Nanoscale, 2025 - pubs.rsc.org
This study presents a theoretical investigation of the physical mechanisms governing small
signal capacitance in ferroelectrics, focusing on Hafnium Zirconium Oxide (Hf0. 5Zr0. 5O2 …

Reliability assesement of ferroelectric nvCAP for small-signal capacitive read-out

O Phadke, H Mulaosmanovic, S Dunkel… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
Unlike the conventional way to use drain current as the read-out mechanism, ferroelectric
field effect transistor (FeFET) can be read-out in a capacitive manner, namely non-volatile …