The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …

Ferroelectric materials have switchable electrical polarization that is appealing for high-
density nonvolatile memories. However, inevitable fatigue hinders practical applications of …

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

SrRuO 3 is endowed with three remarkable features. First, it is a moderately correlated
material that exhibits several novel physical properties; second, it permits the epitaxial …

Biaxial compressive strain has been used to markedly enhance the ferroelectric properties
of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric …

The integration of ferroelectric oxide films into microelectronic devices,, combined with the
size reduction constraints imposed by the semiconductor industry, have revived interest in …

Recent progress in two-dimensional ferroelectrics greatly expands the versatility and
tunability in van der Waals heterostructure based electronics. However, the switching …

HfO2‐based ferroelectric materials are promising candidates for next‐generation nonvolatile
memories. Since the first report on Si‐doped HfO2 ferroelectric thin film in 2011, it has been …

We present a promising technology for nonvolatile flexible electronic devices: A direct
fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der …