Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing
various applications in lighting, displays, biotechnology, and other fields. However, their …

Significant efforts are being put into the development of efficient micrometer-scale light
emitting diodes (LEDs) for future display technologies due to their marked benefits over …

We have investigated for the first time the impact of electron overflow on the performance of
nanowire light-emitting diodes (LEDs) operating in the entire visible spectral range, wherein …

We have examined the carrier injection process of axial nanowire light-emitting diode (LED)
structures and identified that poor carrier injection efficiency, due to the large surface …

The field of III-nitride (InGaN) nanowire micro light-emitting diode (µ-LED) displays is rapidly
expanding and holds great promise, thanks to their chemical stability and outstanding …

Reduction in the light-output power in GaN-based light-emitting diodes (LEDs) with
increasing temperature is a well-known phenomenon. In this work, temperature dependent …

GaN-based light-emitting diodes (LEDs) exhibit a strong efficiency droop with higher current
injection, which has been mainly attributed to Auger recombination and electron leakage …

Blue InGaN/GaN multiple quantum well light-emitting diodes with the conventional and
graded last barriers (GLB) are numerically investigated. When the last GaN barrier is …

AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) suffer from electron
overflow and insufficient hole injection. In this paper, novel DUV LED structures with …