Avalanche photodiodes (APDs) are widely used to detect and amplify weak optical signals
by utilizing the impact ionization process. The choice of material is critical for the detection of …

We report on the demonstration of Al 0.85 Ga 0.15 As 0.56 Sb 0.44 (hereafter, AlGaAsSb)
avalanche photodiodes (APDs) with a 1000 nm-thick multiplication layer. Such a thick …

An extremely low noise Separate Absorption and Multiplication Avalanche Photodiode (SAM-
APD), consisting of a GaAs 0.52 Sb 0.48 absorption region and an Al 0.85 Ga 0.15 As 0.56 …

Design of avalanche photodiodes (APDs) and their limiting factors on operating speed and
responsivity are discussed with consideration of their application to optical receivers for …

High-sensitivity avalanche photodiodes (APDs) are used to amplify weak optical signals in a
wide range of applications, including telecommunications, data centers, spectroscopy …

Simple analytical expressions for temperature coefficients of breakdown voltage of
avalanche photodiodes (APDs) utilizing InP or InAlAs are reported. The work is based on …

Digital alloy and random alloy Al 0.85 Ga 0.15 As 0.56 Sb 0.44 avalanche photodiodes
(APDs) exhibit low excess noise, comparable to Si APDs. Consequently, this material is a …

Abstract Al0. 85Ga0. 15As0. 56Sb0. 44 has recently attracted significant research interest as
a material for 1550 nm low-noise short-wave infrared (SWIR) avalanche photodiodes …

Avalanche photodiodes (APDs) are used in optical receivers of high-speed optical
communication systems to improve signal-to-noise ratio over conventional photodiodes …

Digital alloy Al 0.85 Ga 0.15 As 0.56 Sb 0.44, random alloy Al 0.85 Ga 0.15 As 0.56 Sb 0.44,
and random alloy Al 0.79 In 0.21 As 0.74 Sb 0.26 are promising candidates for the …