Electrothermal analyses in Cu/ZrO2/Pt CBRAM memory using a dual-phase-lag model

E Jemii, M Belkhiria, F Aouaini, F Echouchene… - Journal of …, 2022‏ - Springer
We have investigated the electrothermal behavior in Cu/ZrO2/Pt conductive bridge random
access memory (CBRAM) memory based on the dual-phase-lag thermal model. We have …

Temperature profile and thermal piston component of photoacoustic response calculated by the fractional dual-phase-lag heat conduction theory

A Somer, S Galovic, EK Lenzi, A Novatski… - International Journal of …, 2023‏ - Elsevier
We present the temperature distribution predictions for photothermal systems by considering
an extension of dual-phase lag. It is an extension of the GCE-II and GCE-III models with a …

[HTML][HTML] Optimization of electrothermal response of GAAFET using Taguchi's approach and an artificial neural network

M Belkhiria, H Jallouli, A Bajahzar… - Case Studies in Thermal …, 2024‏ - Elsevier
This work aims to propose a numerical optimization of the electrothermal behavior of a gate-
all-around field effect transistor (GAAFET). The electrothermal model is composed of …

Investigation of trap density effect in gate-all-around field effect transistors using the finite element method

M Belkhiria, F Aouaini, S A. Aldaghfag, F Echouchene… - Electronics, 2023‏ - mdpi.com
Trap density refers to the density of electronic trap states within dielectric materials that can
capture and release charge carriers (electrons or holes) in a semiconductor channel …

Impact of work function engineering on strained silicon based double gated junction-less transistor

TR Pokhrel, A Majumder - Silicon, 2022‏ - Springer
The junction-less transistors provide peerless results to fulfill the demand of IC designers by
its tremendous properties that suppress various Short Channel Effects (SCEs) and allow …

Analytical multistage thermal resistance model for NSFET self-heating effects

P Zhao, T Zhou, N Liu, Y He, G Du - Microelectronics Journal, 2025‏ - Elsevier
As semiconductor technology nodes continue to scale down to 3 nm, the self-heating effect
in Gate-All-Around Nanosheet Field-Effect Transistors (GAA-NSFETs) has become a …

Drift–diffusion-Poisson-dual phase lag thermal model with phonon scattering in gate all around field effect transistor

M Belkhiria, HA Alyousef, H Chehimi, F Aouaini… - Thin Solid Films, 2022‏ - Elsevier
Abstract Gate All Around Field Effect Transistor (GAAFET) is a promising alternative for
improving channel control, reducing leakage currents, and bringing down the operational …

Effect of specularity parameter and convective coefficient on heat transport in semiconductor devices based on mesoscopic method

O Zobiri, A Atia, M Arıcı - Physica B: Condensed Matter, 2023‏ - Elsevier
The effects of thermal behavior on nanoscale Metal Oxide Semiconductor Field Effect
Transistor (nano-MOSFET) are still being studied by the semiconductor industry. This study …

Non-Fourier electrothermal fully coupled analysis of a 5 nm gate-all-around field-effect transistor based on density gradient theory

Z Liu, BH Sun, HH Cui, K Sun - Physics of Fluids, 2025‏ - pubs.aip.org
In the post-Moore era, the three-dimensional fully surrounded channel structure of gate-all-
around field-effect transistors (GAAFETs) significantly enhances gate control capabilities …

Comprehensive Electrothermal Characterization Analysis for Scaled Nanochannels in Gate‐All‐Around Field‐Effect Transistors

Z Wang, F Li, Y Sun, Y Shi, X Li - International Journal of …, 2025‏ - Wiley Online Library
Gate‐all‐around field‐effect transistors (GAAFETs) have garnered extensive research
interest and industrial attention due to the higher gate control capability and remarkable …