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Effects of gate length on GaN HEMT performance at room temperature
We report the electrical characteristics at room temperature of (Al, Ga) N/GaN high-electron-
mobility transistors with different gate lengths L g ranging from 0.15 to 2 μm. Static …
mobility transistors with different gate lengths L g ranging from 0.15 to 2 μm. Static …
Evidence of Poole-frenkel and Fowler-Nordheim tunneling transport mechanisms in leakage current of (Pd/Au)/Al0. 22Ga0. 78N/GaN heterostructures
In this report, the gate leakage mechanism for AlGaN/GaN high electron mobility transistors
(HEMTs) is consistently analyzed by means of temperature-dependent reverse gate current …
(HEMTs) is consistently analyzed by means of temperature-dependent reverse gate current …
Schottky barrier inhomogeneity in (Pd/Au) Al0. 22 Ga0. 78N/GaN/SiC HEMT: Triple Gaussian distributions
The temperature dependence of electrical properties of (Au/Pd)/Al 0.22 Ga 0.78 N/GaN
Schottky barrier diodes (SBDs) have been deeply analyzed by means of forward Igs (Vgs) …
Schottky barrier diodes (SBDs) have been deeply analyzed by means of forward Igs (Vgs) …
Effects of current transportation and deep traps on leakage current and capacitance hysteresis of AlGaN/GaN HEMT
In the temperature range of 40–320 K, we have studied the current-voltage I–V and
capacitance-voltage C–V characteristics of a (Pt/Au)–Al 0.2 Ga 0.8 N/GaN/Al 2 O 3 HEMT …
capacitance-voltage C–V characteristics of a (Pt/Au)–Al 0.2 Ga 0.8 N/GaN/Al 2 O 3 HEMT …
Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: The effect of crystal defects at heterointerface
The pump and probe technique in Raman spectroscopy is used to demonstrate the phonon
transport properties of an In 0.05 Ga 0.95 N/GaN heterostructure. The pump laser generates …
transport properties of an In 0.05 Ga 0.95 N/GaN heterostructure. The pump laser generates …
Local augmentation of phonon transport at GaInN/GaN heterointerface by introducing a graded variation of InN mole fraction
The pump and probe technique in Raman spectroscopy of the E 2 (high) mode is exploited
to uncover the enhancing factor of the phonon transport across Ga 1− x In x N/GaN …
to uncover the enhancing factor of the phonon transport across Ga 1− x In x N/GaN …
Energy transport analysis in a Ga0. 84In0. 16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers
S Okamoto, N Saito, K Ito, B Ma, K Morita, D Iida… - Applied Physics …, 2020 - pubs.aip.org
Anisotropic heat transport in a Ga 0.84 In 0.16 N/GaN-heterostructure on a sapphire
substrate is observed from microscopic Raman images obtained by utilizing coaxial …
substrate is observed from microscopic Raman images obtained by utilizing coaxial …
[HTML][HTML] Determination of Schottky barrier height of graphene electrode on AlGaN/GaN heterostructure
A graphene Schottky contact was fabricated on an AlGaN/GaN heterostructure and
subsequently analyzed. The calculated and experimentally measured Schottky barrier …
subsequently analyzed. The calculated and experimentally measured Schottky barrier …
Cryogenic investigation of the negative pinch-off voltage Vpinch-off, leakage current and interface defects in the Al0. 22Ga0. 78N/GaN/SiC HEMT
A cryogenic investigation of the C gs (V gs) and the transfer I ds (V gs) characteristics is
suggested to monitor the evolution of the pinch-off voltage V pinch-off of the AlGaN/GaN …
suggested to monitor the evolution of the pinch-off voltage V pinch-off of the AlGaN/GaN …
Compact modeling of gate leakage phenomenon in GaN HEMTs
This paper implements a physically derived compact model of current conduction and gate
leakage in AlGaN/GaN high-electron mobility transistors (HEMTs). The drain-source current …
leakage in AlGaN/GaN high-electron mobility transistors (HEMTs). The drain-source current …