Non-and semipolar GaN-based optoelectronic device structures have attracted much
attention in recent years. Best results have been obtained on small bulk substrates cut from …

Lasing in pure green region around 520 nm of InGaN based laser diodes (LDs) on semi-
polar {20 bar 2 1} free-standing GaN substrates was demonstrated under pulsed operation …

US9077151B2 - Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts
less than +/-15 degrees in the C-direction - Google Patents US9077151B2 - Semi-polar III-nitride …

Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {11̅00} sidewalls of c-
axis GaN wires have been grown by organometallic vapor phase epitaxy on c-sapphire …

This article presents a theoretical analysis of dislocation behavior and stress relaxation in
semipolar III-nitride heteroepitaxy, eg, for Al x Ga 1− x N and In y Ga 1− y N layers grown on …

Room-temperature continuous-wave operation of 520 nm InGaN-based green laser diodes
on semi-polar {2021} GaN substrates was demonstrated. A threshold current of 95 mA …

More than two decades of III-N materials research has led to the production of visible
spectrum commercial light-emitting diodes (LEDs) and laser diodes (LDs). Commercial c …

In this paper we present progress made recently in the development of the growth of truly
bulk GaN crystals by the ammonothermal method in basic environment. High quality 2-in c …

We demonstrate electrically driven InGaN based laser diodes (LDs), with a simple AlGaN-
cladding-free epitaxial structure, grown on semipolar (2021) GaN substrates. The devices …

A single nanoscale object containing a set of InGaN/GaN nonpolar multiple-quantum wells
has been analyzed by microphotoluminescence spectroscopy (μPL), high-resolution …