Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies
Abstract Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor
material that has gained significant attention in the field of high voltage and high frequency …
material that has gained significant attention in the field of high voltage and high frequency …
A landscape of β-Ga2O3 Schottky power diodes
MH Wong - Journal of Semiconductors, 2023 - iopscience.iop.org
Abstract β-Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and
development for power electronic applications. This paper reviews state-of-the-art β-Ga 2 O …
development for power electronic applications. This paper reviews state-of-the-art β-Ga 2 O …
Ga2O3 Photon‐Controlled Diode for Sensitive DUV/X‐Ray Detection and High‐Resolution Array Imaging Application
Z Peng, X Hou, Z Han, Z Gan, C Li, F Wu… - Advanced Functional …, 2024 - Wiley Online Library
Sensitive high‐energy photon detection from UV to X‐ray and high‐resolution array imaging
are critical for medical diagnosis, space exploration, and scientific research. The key …
are critical for medical diagnosis, space exploration, and scientific research. The key …
Characteristics of grafted monocrystalline Si/β-Ga2O3p–n heterojunction
Beta-phase gallium oxide (β-Ga 2 O 3) has exceptional electronic properties with vast
potential in power and radio frequency electronics. Despite the excellent demonstrations of …
potential in power and radio frequency electronics. Despite the excellent demonstrations of …
Wide‐bandgap nickel oxide with tunable acceptor concentration for multidimensional power devices
Multidimensional power devices can achieve performance beyond conventional limits by
deploying charge‐balanced p‐n junctions. A key obstacle to develo** such devices in …
deploying charge‐balanced p‐n junctions. A key obstacle to develo** such devices in …
Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF
We introduce vertical Schottky barrier diodes (SBDs) based on β-Ga 2 O 3 with trench
architecture, featuring a high-permittivity dielectric RESURF structure. These diodes are …
architecture, featuring a high-permittivity dielectric RESURF structure. These diodes are …
Enhancing Performance of GaN/Ga2O3 P‐N Junction Uvc Photodetectors via Interdigitated Structure
Z Cai, X He, K Wang, X Hou, Y Mei, L Ying… - Small …, 2024 - Wiley Online Library
Abstract Ga2O3‐based Ultraviolet‐C photodetector (UVCPD) is considered the most
promising UVCPD at present and is divided into Metal‐Semiconductor‐Metal (MSM) and PN …
promising UVCPD at present and is divided into Metal‐Semiconductor‐Metal (MSM) and PN …
Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective
Power semiconductor devices are utilized as solid-state switches in power electronics
systems, and their overarching design target is to minimize the conduction and switching …
systems, and their overarching design target is to minimize the conduction and switching …
N-doped β-Ga2O3/Si-doped β-Ga2O3 linearly-graded pn junction by a one-step integrated approach
C Liu, Z Wu, H Zhai, J Hoo, S Guo, J Wan… - Journal of Materials …, 2025 - Elsevier
The pn junction is the foundation building structure for manufacturing various electronic and
optoelectronic devices. Ultrawide bandgap semiconductors are expected to overcome the …
optoelectronic devices. Ultrawide bandgap semiconductors are expected to overcome the …
Performance Enhancement of NiO/-GaO Heterojunction Diodes by Synergistic Interface Engineering
D Liu, Z Zhang, H Chen, X Tian, Y Wang… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this work, we report on achieving enhanced performance NiOx/beta gallium oxide (-
Ga2O3) heterojunction pn diodes (HJDs) through synergistic interface engineering (SIE) …
Ga2O3) heterojunction pn diodes (HJDs) through synergistic interface engineering (SIE) …