The status of rapid solidification is discussed in terms of recent progress in modelling
methods of achieving solidification at high cooling rates and its effects on alloy constitution …

A model is developed that predicts the steady state velocity of a planar interface and the
chemical composition of the growing phase in terms of the interface temperature and the …

A brief review of the present state of our understanding of the kinetic processes which take
place on the atomic scale at the interface during crystal growth is presented in this paper …

The annealing of semiconductors is of critical importance for successful electronic device
fabrication. The present review surveys the new field of transient annealing and covers all …

The dependence of the nonequilibrium partition coefficient k of Bi in Si upon solidification
velocity v has been measured with sufficient accuracy to distinguish between proposed …

With rapid solidification following pulsed laser melting, we have measured the dependence
on interface orientation of the amount of solute trap** of several group III, IV, and V …

In the past decades, group IV nanowires and nanoparticles have been the subject of
extensive research. Beside tremendous progress in morphological control and integration in …

Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared
photodetectors and intermediate band solar cells. Due to the low solid solubility limits of …

An aluminum–lithium–copper alloy was rapidly solidified via the electrospark deposition
process. High-resolution scanning electron microscopy (HR-SEM), time-of-flight secondary …

An analytical model has been developed to describe Monte Carlo simulation results for the
non-equilibrium incorporation of dopants during crystallization. These Monte Carlo …