Two-dimensional materials for next-generation computing technologies
Rapid digital technology advancement has resulted in a tremendous increase in computing
tasks imposing stringent energy efficiency and area efficiency requirements on next …
tasks imposing stringent energy efficiency and area efficiency requirements on next …
Beyond Moore's law–A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics
Conventional FETs, although serving as the backbone of modern electronics, have
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
Enhanced ferroelectricity in ultrathin films grown directly on silicon
Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …
Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors
It has been shown that a ferroelectric material integrated into the gate stack of a transistor
can create an effective negative capacitance (NC) that allows the device to overcome …
can create an effective negative capacitance (NC) that allows the device to overcome …
Progress and future prospects of negative capacitance electronics: A materials perspective
Negative capacitance in ferroelectric materials has been suggested as a solution to reduce
the power dissipation of electronics beyond fundamental limits. The discovery of …
the power dissipation of electronics beyond fundamental limits. The discovery of …
Numerical investigation of short-channel effects in negative capacitance MFIS and MFMIS transistors: Subthreshold behavior
We present a detailed TCAD analysis of the impact of length scaling and the associated
short-channel effects in the subthreshold regime of the two classes of double-gate negative …
short-channel effects in the subthreshold regime of the two classes of double-gate negative …
Selector-less ferroelectric tunnel junctions by stress engineering and an imprinting effect for high-density cross-point synapse arrays
In the quest for highly scalable and three-dimensional (3D) stackable memory components,
ferroelectric tunnel junction (FTJ) crossbar architectures are promising technologies for …
ferroelectric tunnel junction (FTJ) crossbar architectures are promising technologies for …
Integration of ferroelectric materials: an ultimate solution for next-generation computing and storage devices
R Khosla, SK Sharma - ACS applied electronic materials, 2021 - ACS Publications
Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …
Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor
P-type two-dimensional steep-slope negative capacitance field-effect transistors are
demonstrated for the first time with WSe2 as channel material and ferroelectric hafnium …
demonstrated for the first time with WSe2 as channel material and ferroelectric hafnium …
Physical insights on negative capacitance transistors in nonhysteresis and hysteresis regimes: MFMIS versus MFIS structures
We present a comprehensive comparison of the two different types of ferroelectric negative
capacitance FET (NCFET) structures: metal-ferroelectric-metal-insulator-semiconductor …
capacitance FET (NCFET) structures: metal-ferroelectric-metal-insulator-semiconductor …