Degradation of hexagonal silicon-carbide-based bipolar devices
M Skowronski, S Ha - Journal of applied physics, 2006 - pubs.aip.org
Only a few years ago, an account of degradation of silicon carbide high-voltage pin diodes
was presented at the European Conference on Silicon Carbide and Related Compounds …
was presented at the European Conference on Silicon Carbide and Related Compounds …
Basal plane dislocation-free epitaxy of silicon carbide
Z Zhang, TS Sudarshan - Applied Physics Letters, 2005 - pubs.aip.org
Molten KOH etching was implemented on SiC substrates before growing epilayers on them.
It was found that the creation of basal plane dislocation (BPD) etch pits on the substrates can …
It was found that the creation of basal plane dislocation (BPD) etch pits on the substrates can …
Impact ionization coefficients in 4H-SiC
WS Loh, BK Ng, JS Ng, SI Soloviev… - … on electron devices, 2008 - ieeexplore.ieee.org
Photomultiplication measurements using 244-and 325-nm excitation have been undertaken
on a series of thick 4H-SiC avalanche diodes. With avalanche widths of between 2.7 and 6 …
on a series of thick 4H-SiC avalanche diodes. With avalanche widths of between 2.7 and 6 …
Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers
NA Mahadik, RE Stahlbush, MG Ancona… - Applied Physics …, 2012 - pubs.aip.org
Stacking fault (SF) expansion from basal plane dislocations (BPDs) confined in highly doped
4H-SiC buffer layers is observed under high-power ultraviolet illumination (> 1000 W/cm 2) …
4H-SiC buffer layers is observed under high-power ultraviolet illumination (> 1000 W/cm 2) …
Annealing effects on single Shockley faults in 4H-SiC
T Miyanagi, H Tsuchida, I Kamata, T Nakamura… - Applied physics …, 2006 - pubs.aip.org
We investigated the annealing effect on single Shockley faults (SSFs) in the SiC epitaxial
layers by photoluminescence map** in combination with high-power laser illumination …
layers by photoluminescence map** in combination with high-power laser illumination …
Direct observation of basal-plane to threading-edge dislocation conversion in 4H-SiC epitaxy
The propagation behavior of basal plane dislocations from off-oriented 4H-SiC substrates
into homoepitaxial layers has been investigated using transmission electron microscopy …
into homoepitaxial layers has been investigated using transmission electron microscopy …
Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition
X Zhang, S Ha, Y Hanlumnyang, CH Chou… - Journal of Applied …, 2007 - pubs.aip.org
The morphology of basal plane dislocations (BPDs) in 4 H-Si C homoepitaxial layers has
been investigated by plan-view transmission x-ray topography and molten KOH etching …
been investigated by plan-view transmission x-ray topography and molten KOH etching …
Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors
PG Muzykov, RM Kennedy, QJ Zhang, C Capell… - Microelectronics …, 2009 - Elsevier
The silicon carbide bipolar junction transistor (BJT) is attractive for use in high-voltage
switching applications offering high-voltage blocking characteristics, low switching losses …
switching applications offering high-voltage blocking characteristics, low switching losses …
Structure and morphology of inclusions in 4 offcut 4H-SiC epitaxial layers
The structure of inclusions and their influence on surface morphology, local strain, and basal
plane dislocations were investigated in silicon carbide (SiC) epitaxial layers grown on 4° …
plane dislocations were investigated in silicon carbide (SiC) epitaxial layers grown on 4° …
Evolution of basal plane dislocations during 4H-silicon carbide homoepitaxy
Z Zhang, TS Sudarshan - Applied Physics Letters, 2005 - pubs.aip.org
A method based on the combination of molten KOH etching and reactive ion etching was
developed to track dislocations from 4 H-silicon carbide homoepilayer to the substrate. The …
developed to track dislocations from 4 H-silicon carbide homoepilayer to the substrate. The …