This review provides an overview of area-selective thin film deposition (ASD) with a primary
focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic …

Atomic-scale precision alignment is a bottleneck in the fabrication of next-generation
nanoelectronics. In this study, a redox-coupled inherently selective atomic layer deposition …

Area-selective deposition (ASD) has recently emerged as a promising augmentation of
lithographic patterning of small device features. However, current ASD processes are …

Two fully self-aligned via (SAV) integration schemes by metal recess approach and area-
selective dielectric-on-dielectric (DoD) method are reported in this paper. A topography with …

Nanosheet FETs (NSFETs) are attracting attention as promising devices that can replace
FinFETs beyond the 5-nm node. Despite the importance of the devices, few studies analyze …

Selective and smooth dielectric-on-dielectric was achieved by water-free single-precursor
chemical vapor deposition (CVD) processes with the help of aniline passivation. Aniline …

We have developed a wet chemical etch process for the controlled recess of cobalt metal
based on 'digital etching'. Digital etching is a cyclic process wherein each process cycle …

Area-selective deposition (ASD) of low-k materials is desired in back-end-of-line processes
for fabricating nanopatterns such as fully self-aligned vias. However, the high temperature …

We present a predictive process design kit (PDK) for the 5 nm technology node, the ASAP5
PDK. ASAP5 is not related to a particular foundry and the assumptions are derived from …

Ruthenium (Ru) is a next-generation metal interconnect material, and the demand for
precise etching is on the rise. This study explores anisotropic atomic layer etching (ALE) of …