Enhancing GaN nanowires performance through partial coverage with oxide shells
Core‐shell gallium nitride (GaN)‐based nanowires offer noteworthy opportunities for
innovation in high‐frequency opto‐and microelectronics. This work delves deeply into the …
innovation in high‐frequency opto‐and microelectronics. This work delves deeply into the …
Optical and Structural Analysis of GaN Microneedle Crystals Obtained via GaAs Substrates Decomposition and their Possible Growth Model Using the Volmer–Weber …
GaN microneedle crystals are grown via GaAs substrates decomposition, using ultrahigh‐
pure anhydrous ammonia as nitrogen precursor at 900° C for 4 min. The X‐ray diffraction …
pure anhydrous ammonia as nitrogen precursor at 900° C for 4 min. The X‐ray diffraction …
[PDF][PDF] Atomic Arrangements and Orientations of Aligned Gallium-Nitride Nanoneedles Grown by Using Hydride Vapor Phase Epitaxy
Low-dimensional GaN nanoneedles were grown on GaN/Si (111) by using HVPE (hydride
vapor phase epitaxy), and the initial growth morphologies were analyzed. The nanoneedles …
vapor phase epitaxy), and the initial growth morphologies were analyzed. The nanoneedles …