In1-xGaxSb nanofoams made by ion irradiation of sputtered films: Atomic composition and structure
This article reports on the atomic composition and structural changes induced by ion
irradiation in In 1-x Ga x Sb films deposited by magnetron sputtering on SiO 2/Si. Samples …
irradiation in In 1-x Ga x Sb films deposited by magnetron sputtering on SiO 2/Si. Samples …
Atomic composition, structure, and electrical properties of In1-xGaxSb films deposited by magnetron sputtering
This article reports the formation of polycrystalline In 1-x Ga x Sb films (x= 0, 0.2, 0.4, 0.5,
and 1) deposited by magnetron sputtering on SiO 2/Si substrates and a comprehensive …
and 1) deposited by magnetron sputtering on SiO 2/Si substrates and a comprehensive …
Thermal stability of In1-xGaxSb nanofoams
CA Bolzan, LT Rossetto, AS Kochenborger… - Vacuum, 2024 - Elsevier
This article presents the thermal stability of In 1-x Ga x Sb films with different In/Ga relative
concentration and different levels of porosity, subjected to thermal annealing. In 1-x Ga x Sb …
concentration and different levels of porosity, subjected to thermal annealing. In 1-x Ga x Sb …
Local structure of porous InSb films: From first to third-shell EXAFS investigation
Extended x-ray absorption fine structure spectroscopy was used to investigate the
neighborhood of In and Sb atoms in InSb films deposited by magnetron sputtering and …
neighborhood of In and Sb atoms in InSb films deposited by magnetron sputtering and …
Compositional, structural and thermoelectric characterization of InxGa1-xSb films deposited by magnetron sputtering and modified by ion irradiation
CA Bolzan - 2023 - lume.ufrgs.br
InxGa1-xSb (x= 0.5, 0.6, 0.8 and 1) films were deposited by radio frequency magnetron
sputtering onto SiO2/Si substrates at 420° C and the compositional, structural and …
sputtering onto SiO2/Si substrates at 420° C and the compositional, structural and …