Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

Benefitted from progress on the large-diameter Ga 2 O 3 wafers and Ga 2 O 3 processing
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …

Avalanche and surge robustness involve fundamental carrier dynamics under high electric
field and current density. They are also prerequisites of any power device to survive …

Vertical heterojunction NiO/β n-Ga 2 O/n+ Ga 2 O 3 rectifiers employing NiO layer extension
beyond the rectifying contact for edge termination exhibit breakdown voltages (VB) up to 4.7 …

This work demonstrates vertical Ga2O3 Schottky barrier diodes (SBDs) with a novel junction
termination extension (JTE) comprising multiple layers of sputtered p-type nickel oxide …

A novel polarization‐sensitive artificial optoelectronic synapse based on β‐Ga2O3 single‐
crystal is proposed in this work, featuring reconfigurable anisotropic vision. A series of …

Efficient, ultrahigh-voltage power-conversion electronics (with voltages> 20 kV) require
semiconductors with an energy gap much larger than that of silicon. The wide-bandgap …

Glutaraldehyde disinfectant has been widely applied in aquaculture, farming, and medical
treatment. Excessive concentrations of glutaraldehyde in the environment can lead to …

Ga2O3 has emerged as a promising ultrawide bandgap semiconductor for numerous device
applications owing to its excellent material properties. In this paper, we present a …

Edge termination is the enabling building block of power devices to exploit the high
breakdown field of wide bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors …