Recent developments in perpendicular magnetic anisotropy thin films for data storage applications
The incessant demand for higher density, faster access time and lower power consuming
memory devices such as random access memories have driven tremendous research and …
memory devices such as random access memories have driven tremendous research and …
Spin-orbit torques: Materials, physics, and devices
Spintronics, that is, the utilization of electron spin to enrich the functionality of
microelectronics, has led to the inception of numerous novel devices, particularly magnetic …
microelectronics, has led to the inception of numerous novel devices, particularly magnetic …
Spin–orbit torque switching in a T-type magnetic configuration with current orthogonal to easy axes
Different symmetry breaking ways determine various magnetization switching modes driven
by spin–orbit torques (SOT). For instance, an applied or effective field parallel to applied …
by spin–orbit torques (SOT). For instance, an applied or effective field parallel to applied …
Gilbert dam** constants of Ta/CoFeB/MgO (Ta) thin films measured by optical detection of precessional magnetization dynamics
The magnetization dynamics of both Ta/CoFeB/MgO and Ta/CoFeB/Ta films were
investigated using an all-optical pump-probe method. The magnetic field strength and the …
investigated using an all-optical pump-probe method. The magnetic field strength and the …
Large perpendicular magnetic anisotropy at Fe/MgO interface
A large perpendicular magnetic anisotropy (PMA) of 1.4 MJ/m 3 was observed from ultrathin
Fe/MgO (001) bilayers grown on Cr-buffered MgO (001). The PMA strongly depends on the …
Fe/MgO (001) bilayers grown on Cr-buffered MgO (001). The PMA strongly depends on the …
MgO (001) barrier based magnetic tunnel junctions and their device applications
Spintronics has received a great attention and significant interest within the past decades,
and provided considerable and remarked applications in industry and electronic information …
and provided considerable and remarked applications in industry and electronic information …
All-electrical manipulation of magnetization in magnetic tunnel junction via spin–orbit torque
Besides spin-transfer torque, spin–orbit torque (SOT) provides us with another electrical way
for develo** magnetic random access memory (MRAM) based on magnetic tunnel …
for develo** magnetic random access memory (MRAM) based on magnetic tunnel …
Impact of Ta diffusion on the perpendicular magnetic anisotropy of Ta/CoFeB/MgO
Effects of Ta diffusion on the perpendicular magnetic anisotropy (PMA) of Ta/Co 0.6 Fe 0.2 B
0.2 (12.5 Å)/MgO stacks were investigated. We found that Ta initially mixed with Co 0.6 Fe …
0.2 (12.5 Å)/MgO stacks were investigated. We found that Ta initially mixed with Co 0.6 Fe …
Spin pum** and inverse spin Hall effect in germanium
We have measured the inverse spin Hall effect (ISHE) in n-Ge at room temperature. The spin
current in germanium was generated by spin pum** from a CoFeB/MgO magnetic tunnel …
current in germanium was generated by spin pum** from a CoFeB/MgO magnetic tunnel …
Spin torque nano-oscillator driven by combined spin injection from tunneling and spin Hall current
Spin-transfer torque nano-oscillators (STNO) are important candidates for several
applications based on ultra-tunable microwave generation and detection. The microwave …
applications based on ultra-tunable microwave generation and detection. The microwave …