Benchmarking of FinFET, nanosheet, and nanowire FET architectures for future technology nodes
Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (LG) of 16 nm
and below are benchmarked against equivalent FinFETs. The device performance is …
and below are benchmarked against equivalent FinFETs. The device performance is …
TID effects in highly scaled gate-all-around Si nanowire CMOS transistors irradiated to ultrahigh doses
Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA)
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
A multi-method simulation toolbox to study performance and variability of nanowire FETs
An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been
developed to characterise the performance, scalability, and variability of state-of-the-art …
developed to characterise the performance, scalability, and variability of state-of-the-art …
Automatic Prediction of Metal–Oxide–Semiconductor Field‐Effect Transistor Threshold Voltage Using Machine Learning Algorithm
A fast and precise threshold voltage (Vth) extraction method is required for the process
design of electronic systems using metal–oxide–semiconductor field‐effect transistors …
design of electronic systems using metal–oxide–semiconductor field‐effect transistors …
Does the threshold voltage extraction method affect device variability?
The gate-all-around nanowire FET (GAA NW FET) is one of the most promising architectures
for the next generation of transistors as it provides better performance than current mass …
for the next generation of transistors as it provides better performance than current mass …
Comparing smoothing techniques for extracting MOSFET threshold voltage
C Stankus, M Ahmed - Solid-State Electronics, 2020 - Elsevier
Measurement noise acts as a barrier to the accurate calculation of threshold voltage by
derivative-based extraction methods. We examined several smoothing techniques and their …
derivative-based extraction methods. We examined several smoothing techniques and their …
Rapid MOSFET threshold voltage testing for high throughput semiconductor process monitoring
MH Herman, TT Nguyen, K Wong… - 2024 IEEE 36th …, 2024 - ieeexplore.ieee.org
We describe a method for rapid MOSFET threshold voltage (Vt) measurement. Multiple spot
Ids measurements are compared to stored reference data. Each spot measurement yields …
Ids measurements are compared to stored reference data. Each spot measurement yields …
Process-induced variability in nanoscale FinFETs: Does extraction methods have any impact?
In this work, we have studied the effect of threshold voltage (V_t) extraction methods on in-
wafer variability of sub-10nm fin-width FinFETs. Using six different V_t extraction techniques …
wafer variability of sub-10nm fin-width FinFETs. Using six different V_t extraction techniques …
High Performance InGaAs FinFET With High Indium Content for RF Application
YJ Jiang - 2023 - search.proquest.com
With the rapid advancement of technology, 5G communication technology has become more
prevalent, increasing the demand for high-frequency components. Among these, III-V …
prevalent, increasing the demand for high-frequency components. Among these, III-V …
Vₜ Extraction Methodologies Influence Process Induced Vₜ Variability: Does This Fact Still Hold for Advanced Technology Nodes?
MS Bhoir, T Chiarella, J Mitard… - … on Electron Devices, 2020 - ieeexplore.ieee.org
In this work, we have investigated the influence of V t extraction procedure on overall V t
variability of sub-10 nm W fin FinFETs. Using six different V t extraction techniques, we have …
variability of sub-10 nm W fin FinFETs. Using six different V t extraction techniques, we have …