All-Analytic Statistical Modeling of Constellations in (Optical) Transmission Systems Driven by High-Speed Electronic Digital to Analog Converters Part I: DAC …

M Nazarathy, I Tomkos - Photonics, 2024 - search.proquest.com
This two-part work develops a comprehensive toolbox for the statistical characterization of
nonlinear distortions of DAC-generated signal constellations to be transmitted over …

Analytical analysis and modelling of variation in maximum frequency of oscillation of subthreshold MOSFET

R Banchuin, R Chaisricharoen - The 4th Joint International …, 2014 - ieeexplore.ieee.org
In this research, analytical analysis and modelling of statistical variations in maximum
frequency of oscillation of subthreshold MOSFET, has been proposed with major …

Integrated Circuit Blocks for In-Memory Computing

O Numan - 2020 - aaltodoc.aalto.fi
There are several possible hardware implementations of neural networks based either on
digital, analog, or analog-mixed-signal circuits. This thesis focuses on possible analog …

CMOS image sensor with FPN reduction by correlated double sampling in current mode

RA Souza, LGM Ventura, LP Reis… - … 31st Symposium on …, 2016 - ieeexplore.ieee.org
The Active Pixel Sensor (APS) has been the preferred choice for CMOS image sensor
topology in the last decades. However, due to process variations, parameter mismatches …

Device mismatch analysis and effect compensation in fundamental analog cells

P Faragó, D Bogăţeanu, E Ceuca… - Proceedings of the …, 2013 - ieeexplore.ieee.org
The operation of highly complex analog ICs is strongly affected by the non-idealities
inherently induced in modern sub-micron production technologies. Extensive testing has …

[PDF][PDF] Analog circuit design automation against process variations and aging phenomena

E Afacan - 2016 - researchgate.net
Reliability of CMOS circuits has become a major concern due to substantially worsening
process variations and aging phenomena in deep sub-micron devices. As a result …

Analysis and comprehensive analytical modeling of statistical variations in subthreshold MOSFET's high frequency characteristics

R Banchuin - Advances in Electrical and Electronic Engineering, 2014 - advances.vsb.cz
In this research, the analysis of statistical variations in subthreshold MOSFET's high
frequency characteristics defined in terms of gate capacitance and transition frequency …

[PDF][PDF] Algorithms for massively parallel, event-based hardware

KL Müller - 2015 - zora.uzh.ch
The future of computing is uncertain: Attempting to keep up with the promise of exponential
growth of computational power over time implicit in Moore's Law, chip manufacturers have in …

An electrical model for nanometer CMOS device stress effect in design and simulation of analog reference circuits

D Wang, PK Chan - IEEE Transactions on Very Large Scale …, 2018 - ieeexplore.ieee.org
This paper presents a new electrical-based stress model that addresses the stress effect in
the nanometer CMOS devices. As such, the electrical performance of analog circuits in the …

Novel complete probabilistic models of random variation in high frequency performance of nanoscale MOSFET

R Banchuin - Journal of Electrical and Computer Engineering, 2013 - Wiley Online Library
The novel probabilistic models of the random variations in nanoscale MOSFET′ s high
frequency performance defined in terms of gate capacitance and transition frequency have …