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Enhanced thermoelectric performance of GeTe-based composites incorporated with Fe nanoparticles
C Zhu, J Wang, F Luo, S Zhang, J Wang… - … Applied Materials & …, 2022 - ACS Publications
Incorporated nanoscale phases in thermoelectric (TE) materials can optimize the electronic
and thermal transport properties to obtain high-performance TE materials. The rapid spark …
and thermal transport properties to obtain high-performance TE materials. The rapid spark …
Sharp Raman Anomalies and Broken Adiabaticity at a Pressure Induced Transition <?format ?>from Band to Topological Insulator in
The nontrivial electronic topology of a topological insulator is thus far known to display
signatures in a robust metallic state at the surface. Here, we establish vibrational anomalies …
signatures in a robust metallic state at the surface. Here, we establish vibrational anomalies …
Sb2Se3 under pressure
Selected members of the A2B3 (A= Sb, Bi; B= Se, Te) family are topological insulators. The
Sb2Se3 compound does not exhibit any topological properties at ambient conditions; a …
Sb2Se3 compound does not exhibit any topological properties at ambient conditions; a …
Strategies and challenges of high-pressure methods applied to thermoelectric materials
We describe the current state of experimental studies of the effects of applied high pressure
or stress on the thermoelectric properties and performance parameters of thermoelectric …
or stress on the thermoelectric properties and performance parameters of thermoelectric …
High‐pressure studies of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3
Abstract Bi2Se3, Bi2Te3, and Sb2Te3 are narrow bandgap semiconductors with tetradymite
crystal structure (R‐3m) which have been extensively studied along with their alloys due to …
crystal structure (R‐3m) which have been extensively studied along with their alloys due to …
Nanocrystalline Bi2Te3 thin films synthesized by electrodeposition method for photoelectrochemical application
Abstract Bismuth Telluride (Bi 2 Te 3) thin films are prepared onto the stainless steel
substrates by electrodeposition technique. Effects of varying deposition time on physico …
substrates by electrodeposition technique. Effects of varying deposition time on physico …
Pressure-induced phase transition in BiSe at 3 GPa: electronic topological transition or not?
In recent years, a low pressure transition around P $\sim $3 GPa exhibited by the A $ _2 $ B
$ _3 $-type 3D topological insulators is attributed to an electronic topological transition (ETT) …
$ _3 $-type 3D topological insulators is attributed to an electronic topological transition (ETT) …
Stress-controlled thermoelectric module for energy harvesting and its application for the significant enhancement of the power factor of Bi2Te3-based thermoelectrics
We propose a model of a thermoelectric module in which the performance parameters can
be controlled by applied tuneable stress. This model includes a miniature high-pressure …
be controlled by applied tuneable stress. This model includes a miniature high-pressure …
Raman scattering of rare earth sesquioxide Ho2O3: A pressure and temperature dependent study
Pressure and temperature dependent Raman scattering studies on Ho 2 O 3 have been
carried out to investigate the structural transition and the anharmonic behavior of the …
carried out to investigate the structural transition and the anharmonic behavior of the …
Pressure-induced topological and structural phase transitions in natural van der Waals heterostructures from the homologous family: Raman …
A new class of van der Waals heterostructures of (SnTe) m (Bi 2 Te 3) n (with m= 1, 2,.. and
n= 1, 2,..), consisting of a topological crystalline insulator SnTe and a topological insulator Bi …
n= 1, 2,..), consisting of a topological crystalline insulator SnTe and a topological insulator Bi …