Enhanced thermoelectric performance of GeTe-based composites incorporated with Fe nanoparticles

C Zhu, J Wang, F Luo, S Zhang, J Wang… - … Applied Materials & …, 2022 - ACS Publications
Incorporated nanoscale phases in thermoelectric (TE) materials can optimize the electronic
and thermal transport properties to obtain high-performance TE materials. The rapid spark …

Sharp Raman Anomalies and Broken Adiabaticity at a Pressure Induced Transition <?format ?>from Band to Topological Insulator in

A Bera, K Pal, DVS Muthu, S Sen, P Guptasarma… - Physical review …, 2013 - APS
The nontrivial electronic topology of a topological insulator is thus far known to display
signatures in a robust metallic state at the surface. Here, we establish vibrational anomalies …

Sb2Se3 under pressure

I Efthimiopoulos, J Zhang, M Kucway, C Park… - Scientific reports, 2013 - nature.com
Selected members of the A2B3 (A= Sb, Bi; B= Se, Te) family are topological insulators. The
Sb2Se3 compound does not exhibit any topological properties at ambient conditions; a …

Strategies and challenges of high-pressure methods applied to thermoelectric materials

NV Morozova, IV Korobeinikov… - Journal of Applied …, 2019 - pubs.aip.org
We describe the current state of experimental studies of the effects of applied high pressure
or stress on the thermoelectric properties and performance parameters of thermoelectric …

High‐pressure studies of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3

FJ Manjón, R Vilaplana, O Gomis… - … status solidi (b), 2013 - Wiley Online Library
Abstract Bi2Se3, Bi2Te3, and Sb2Te3 are narrow bandgap semiconductors with tetradymite
crystal structure (R‐3m) which have been extensively studied along with their alloys due to …

Nanocrystalline Bi2Te3 thin films synthesized by electrodeposition method for photoelectrochemical application

JB Thorat, SV Mohite, AA Bagade, TJ Shinde… - Materials Science in …, 2018 - Elsevier
Abstract Bismuth Telluride (Bi 2 Te 3) thin films are prepared onto the stainless steel
substrates by electrodeposition technique. Effects of varying deposition time on physico …

Pressure-induced phase transition in BiSe at 3 GPa: electronic topological transition or not?

A Bera, K Pal, DVS Muthu, UV Waghmare… - arxiv preprint arxiv …, 2016 - arxiv.org
In recent years, a low pressure transition around P $\sim $3 GPa exhibited by the A $ _2 $ B
$ _3 $-type 3D topological insulators is attributed to an electronic topological transition (ETT) …

Stress-controlled thermoelectric module for energy harvesting and its application for the significant enhancement of the power factor of Bi2Te3-based thermoelectrics

IV Korobeinikov, NV Morozova… - Journal of Physics D …, 2017 - iopscience.iop.org
We propose a model of a thermoelectric module in which the performance parameters can
be controlled by applied tuneable stress. This model includes a miniature high-pressure …

Raman scattering of rare earth sesquioxide Ho2O3: A pressure and temperature dependent study

SD Pandey, K Samanta, J Singh, ND Sharma… - Journal of Applied …, 2014 - pubs.aip.org
Pressure and temperature dependent Raman scattering studies on Ho 2 O 3 have been
carried out to investigate the structural transition and the anharmonic behavior of the …

Pressure-induced topological and structural phase transitions in natural van der Waals heterostructures from the homologous family: Raman …

S Pal, R Arora, A Banik, KV Glazyrin, DVS Muthu… - Physical Review B, 2022 - APS
A new class of van der Waals heterostructures of (SnTe) m (Bi 2 Te 3) n (with m= 1, 2,.. and
n= 1, 2,..), consisting of a topological crystalline insulator SnTe and a topological insulator Bi …