New structure transistors for advanced technology node CMOS ICs
Q Zhang, Y Zhang, Y Luo, H Yin - National Science Review, 2024 - academic.oup.com
Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …
Van der Waals Heterostructure Contact Strategy for Barrier‐Free 2D Complementary Transistors
Incorporating atomically thin 2D semiconductors (2DSCs) into the vertical complementary
field‐effect transistors (CFETs) is of great significance in enabling devices to break through …
field‐effect transistors (CFETs) is of great significance in enabling devices to break through …
Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors
Recent advancements in power electronics have been driven by Ga2O3-based ultrawide
bandgap (UWBG) semiconductor devices, enabling efficient high-current switching …
bandgap (UWBG) semiconductor devices, enabling efficient high-current switching …
Process Development and Performance Benefits of 0.64-0.36 μm Pitch Hybrid Bonding on Intel Process
Hybrid bonding pitch scaling is critical to continue to support higher chip to chip bandwidth
at reduced area and power overhead for chip-to-chip signaling. This paper discusses the …
at reduced area and power overhead for chip-to-chip signaling. This paper discusses the …
Stencil-based selective surface functionalization of silicon nanowires in 3D device architectures for next-generation biochemical sensors
Surface functionalization of 1D materials such as silicon nanowires is a critical preparation
technology for biochemical sensing. However, existing nonselective functionalization …
technology for biochemical sensing. However, existing nonselective functionalization …
Vertically Stacked Nanosheet Number Optimization Strategy for Complementary FET (CFET) Scaling Beyond 2 nm
Complementary field-effect transistor is considered to be one of the most promising
structures to replace gate-all-around (GAA) field-effect transistors after 2 nm node and …
structures to replace gate-all-around (GAA) field-effect transistors after 2 nm node and …
Performance comparison of vertically stacked nanosheet CFET and standard CMOS without and with parasitic channels
J Li, M Zhao, H Lu, Y Zhang - Microelectronic Engineering, 2023 - Elsevier
The threshold voltage regulation and the effect of parasitic channels are important issues in
CFET. In this paper, the characteristics of the complementary field-effect transistor (CFET) …
CFET. In this paper, the characteristics of the complementary field-effect transistor (CFET) …
Understanding of the Electrostatic Coupling in Flip FET (FFET) and Corresponding Strategies
Flip FET (FFET), a novel self-aligned stacked transistor architecture with dual-sided
transistor stacking, was recently proposed and demonstrated. However, due to the vertically …
transistor stacking, was recently proposed and demonstrated. However, due to the vertically …
Realization of CMOS operation in 3-dimensional stacked FET with self-aligned direct backside contact
J Park, J Park, J Park, K Hwang, J Yun… - Japanese Journal of …, 2024 - iopscience.iop.org
Beyond MBCFET TM technology, the 3-dimensional stacked FET (3DSFET) emerges as a
promising contender, featuring a structure that stacks NMOS and PMOS vertically to …
promising contender, featuring a structure that stacks NMOS and PMOS vertically to …
Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched by Band Alignments of Individual Channels
Monolithic 3-D stacked Ge0. 9Sn0. 1 nanosheet and Ge0. 75Si0. 25 nanosheet
complementary FETs with multiple P/N junction isolation by in-situ doped CVD epitaxy are …
complementary FETs with multiple P/N junction isolation by in-situ doped CVD epitaxy are …