This letter reports a linear multiply-accumulate (MAC) operation conducted on a crossbar
memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide …

In this invited article we present a comprehensive overview of 28 nm high-k-metal gate-
based ferroelectric field effect transistor devices for synaptic applications. The devices under …

This article reports an improvement in the performance of the hafnium oxide-based (HfO2)
ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial …

This article reports a novel ferroelectric field-effect transistor (FeFET)-based crossbar array
cascaded with an external resistor. The external resistor is shunted with the column of the …

Indium gallium zinc oxide (IGZO)-based ferroelectric thin-film transistors (FeTFTs) are being
vigorously investigated for being deployed in computing-in-memory (CIM) applications …

This letter reports multi-level-cell (MLC) operation of ferroelectric FETs (FeFET) arranged in
AND-connected memory arrays with a bit-error rate (BER) of 4% when writing a random data …

Ferroelectric memory, recognized as a prominent type of non-volatile memory, is expected to
play a key role in the emerging in-memory applications. This review examines the …

Memristors provide a tempting solution for weighted synapse connections in neuromorphic
computing due to their size and non-volatile nature. However, memristors are unreliable in …

This letter proposes a memory cell, denoted by 1F-1 T, consisting of a ferroelectric field-
effect transistor (FeFET) cascaded with another current-limiting transistor (T). The transistor …

The synapse is a key element of neuromorphic computing in terms of efficiency and
accuracy. In this paper, an optimized current-controlled memristive synapse circuit is …