Evidence suggests that MOSFET degradation is due to interface-states generation by
electrons having 3.7 eV and higher energies. This critical energy and the observed time …

An empirical model for device degradation due to hot-carrier injection in submicron n-
channel MOSFET's is presented. Relationships between device degradation, drain voltage …

Recent experimental studies on 1/f noise in MOS transistors are reviewed. Arguments are
given for the two schools of thought on the origin of 1/f noise. The consequences of models …

It is shown that the charge pum** technique is able not only to determine the degradation
mechanisms in MOS transistors under all kinds of aging conditions (eg, irradiation, hot …

This paper presents a comparison of hot-carrier degradation experiments with simulations of
hot electron and hole emission into the oxide. It is shown that both the emission of holes and …

The high drain-effect transistor characteristic observed after hot-carrier injection and
trap** in the oxide has been found to be due to the uneven trapped-carrier distribution …

Recently, a single-crystal silicon point-contact solar cell has been shown to have energy
conversion efficiency of 28% at 100 suns. Such a cell has been fully analyzed; and it …

New kinds of hot-carrier injection mechanisms, which are different from channel hot-electron
and substrate hot-electron injection mechanisms already reported by Ning, et al., are …

Drain avalanche hot-carrier (DAHC) injection, which imposes the most severe limitations on
n-channel MOS device design, is investigated from the viewpoint of surface-state generation …

Since the beginning of semiconductor era in microelectronics the methodology of reliability
assessment became a well established area. In most cases the reliability assessment …