Disclosing the annihilation effect of ion-implantation induced defects in single-crystal diamond by resonant MEMS

G Chen, Z Zhang, Y Koide, S Koizumi, Z Huang… - Diamond and Related …, 2023 - Elsevier
Single-crystal diamond presents as an ideal semiconductor material for high-performance
and high-reliability MEMS devices, on account of its outstanding mechanical and physical …

Analysis of diamond dislocations by Raman polarization measurement

M Takeuchi, M Yasuoka, M Ishii, N Ohtani… - Diamond and Related …, 2023 - Elsevier
Raman peaks with weak intensities at low wavelength were detected in dislocation areas of
diamond substrates. Polarized Raman measurements were performed, and the origins of …

Extending Spin Dephasing Time of Perfectly Aligned Nitrogen‐Vacancy Centers by Mitigating Stress Distribution on Highly Misoriented Chemical‐Vapor‐Deposition …

T Tsuji, T Sekiguchi, T Iwasaki… - Advanced Quantum …, 2024 - Wiley Online Library
Extending the spin‐dephasing time (T2*) of perfectly aligned nitrogen‐vacancy (NV) centers
in large‐volume chemical vapor deposition (CVD) diamonds leads to enhanced DC …

AFM, Nano− indentation and TEM characterization study of HFCVD diamond on tantalum and diamond seeded cemented carbide inserts

A Jena, BB Palei, SK Pattnaik, SK Sarangi - International Journal of …, 2024 - Elsevier
This research describes an enhanced characterization technique for studying diamond
production by hot filament chemical vapor deposition (HFCVD) on cemented carbide (WC …

Fabrication of self-standing large (111) single crystal diamond using bulk growth of (100) CVD diamond and lift-off process

T Shimaoka, H Yamada, A Chayahara - Diamond and Related Materials, 2024 - Elsevier
Diamond (111) plane is superior in impurity do** and quantum spin control to (100) plane,
however, there are many technical issues in mass production of the substrate, such as a …

Sensing The Point Defects by Single-Crystal Diamond MEMS Resonators

G Chen, Z Zhang, L Sang, Y Koide… - … Conference on Solid …, 2023 - ieeexplore.ieee.org
Point defects in semiconductors greatly affect the electronic and optical properties.
Conventional structural methods such as XRD, TEM, and Raman etc. are difficult to observe …